Projects funded by the NCN
Controlling n- and p-type doping of (Al,Ga,In)N nanowires grown by molecular beam epitaxy
2024/53/B/ST11/03625
Keywords:
nitride semiconductor nanowires doping molecular beam epitaxy secondary ion mass spectroscopy
Descriptors:
- ST11_09:
- ST11_12:
Panel:
ST11 - Materials Engineering
Host institution :
Instytut Fizyki Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 10
Call: OPUS 27 - announced on 2024-03-21
Amount awarded: 2 146 000 PLN
Project start date (Y-m-d): 2025-09-25
Project end date (Y-m-d): 2029-09-24
Project duration:: 48 months (the same as in the proposal)
Project status: Pending project
Project description
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