Projects funded by the NCN

Simple solution to crucial nanocrystalline semiconductor nitrides GaN and InN of a controlled polytype make-up: playing ...

Call: OPUS 5 , Panel: ST5

Principal investigator: prof. Jerzy Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

Call: OPUS 25 , Panel: ST5

Principal investigator: prof. Michał Boćkowski

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Arsenic-dilluted Gallium Nitride alloys with high As concentration grown by MOVPE

Call: PRELUDIUM 21 , Panel: ST5

Principal investigator: Wojciech Olszewski

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Study of gallium nitride solubility in ammonothermal alkaline solution under various physicochemical conditions

Call: PRELUDIUM 20 , Panel: ST5

Principal investigator: Karolina Grabiańska

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Quantum structures with super broad emission spectrum and increased emission intensity for the new generation of superlu...

Call: OPUS 21 , Panel: ST7

Principal investigator: dr Grzegorz Staszczak

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exc...

Call: SONATA 16 , Panel: ST5

Principal investigator: dr Tomasz Sochacki

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Nanoporous GaN - a new platform for realization of quantum structures

Call: SONATA 15 , Panel: ST5

Principal investigator: dr Marta Sawicka

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Impurity 3D diffusion in GaN - mechanism and the role of defects

Call: OPUS 17 , Panel: ST5

Principal investigator: prof. Andrzej Turos

Sieć Badawcza ŁUKASIEWICZ - Instytut Technologii Materiałów Elektronicznych

Ion implantation into undoped HVPE-GaN layers - on the road to high-power vertical transistors

Call: OPUS 15 , Panel: ST5

Principal investigator: dr hab. Michał Boćkowski

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

The nanomaterials approach for the validation of theory for the diluted magnetic semiconductors based on gallium nitride

Call: OPUS 1 , Panel: ST5

Principal investigator: prof. Jerzy Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Thermodynamics and kinetics of GaN synthesis in metallic systems used for crystal growth of diamond - GaNDia

Call: OPUS 12 , Panel: ST5

Principal investigator: dr hab. Izabella Grzegory

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

Tunnel-junctions and highly resistive layers in GaN-based heterostructures

Call: OPUS 11 , Panel: ST7

Principal investigator: dr hab. Marta Gładysiewicz-Kudrawiec

Politechnika Wrocławska

Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

Call: PRELUDIUM 1 , Panel: ST3

Principal investigator: Paulina Kamyczek

Politechnika Wrocławska