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1. The nitride semiconductor stuctures for long-lived betavoltaic nuclear batteries on galium nitride substrates with reduc…

Principal investigator: dr Szymon Grzanka

Instytut Wysokich Ciśnień PAN

Call: SONATA 8, Panel: ST7

2. Ab initio thermodynamics and engineering of point defects in nanometric near-surface areas of III-nitride semiconductors…

Principal investigator: dr Paweł Tomasz Kempisty

Instytut Wysokich Ciśnień PAN

Call: OPUS 21, Panel: ST5

3. Supersymmetric nitride-based semiconductor lasers

Principal investigator: prof. Tomasz Grzegorz Czyszanowski

Politechnika Łódzka

Call: OPUS 24 (LAP), Panel: ST7

4. Metal vacancies, their complexes and clusters in nitride semiconductors.

Principal investigator: dr Robert Filip Czernecki

Instytut Wysokich Ciśnień PAN

Call: WEAVE-UNISONO, Panel: ST5

5. Monolithic superconductor-semiconductor integration using nitride platform

Principal investigator: prof. Czesław Dariusz Skierbiszewski

Instytut Wysokich Ciśnień PAN

Call: OPUS 16, Panel: ST5

6. MBE growth and submicron imaging of local electronic and optical processes in nitride semiconductor nanostructures

Principal investigator: prof. Bogdan Jerzy Kowalski

Instytut Fizyki PAN

Call: OPUS 11, Panel: ST5

7. Spin dynamics and electron spin filtering effect in III-V dilute nitrides semiconductors

Principal investigator: dr Michał Baranowski

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

Call: PRELUDIUM 4, Panel: ST3

8. The nanomaterials approach for the validation of theory for the diluted magnetic semiconductors based on gallium nitride

Principal investigator: prof. Jerzy Franciszek Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Call: OPUS 1, Panel: ST5

9. Simple solution to crucial nanocrystalline semiconductor nitrides GaN and InN of a controlled polytype make-up: playing …

Principal investigator: prof. Jerzy Franciszek Janik

Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie, Wydział Energetyki i Paliw

Call: OPUS 5, Panel: ST5

10. Nitride semiconductor-based green VECSELs – working around the "green gap"

Principal investigator: prof. Piotr Perlin

Instytut Wysokich Ciśnień PAN

Call: OPUS 27, Panel: ST7

11. Nitride-semiconductors laser diodes with polarization doping

Principal investigator: prof. Piotr Perlin

Instytut Wysokich Ciśnień PAN

Call: OPUS 20, Panel: ST7

12. Lattice dynamics and thermodynamic stability of nitride semiconductors surfaces based on ab initio methods.

Principal investigator: dr Paweł Tomasz Kempisty

Instytut Wysokich Ciśnień PAN

Call: OPUS 14, Panel: ST3

13. Electronic Structure of Rare Earth Doped Group III Nitride Semiconductors

Principal investigator: dr Maciej Janusz Winiarski

Instytut Niskich Temperatur i Badań Strukturalnych im. Włodzimierza Trzebiatowskiego PAN

Call: SONATA 13, Panel: ST3

14. Modulation spectroscopy of novel nitride semiconductor structures in ultraviolet spectral range

Principal investigator: dr Magdalena Violetta Latkowska-Baranowska

Politechnika Wrocławska

Call: SONATA 9, Panel: ST7

15. Optical and electronic properties of ternary and quaternary dilute III-V bismides and nitrides semiconductors, having th…

Principal investigator: dr Wojciech Mieczysław Linhart

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

Call: SONATA 7, Panel: ST3

16. The effect of distribution of internal electric fields on the optical properties of low-dimensional structures of nitrid…

Principal investigator: dr hab. Agata Kamińska

Instytut Fizyki PAN

Call: OPUS 3, Panel: ST3

17. Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

Principal investigator: Paulina Kamyczek

Politechnika Wrocławska

Call: PRELUDIUM 1, Panel: ST3

18. Modelling of nitride-based vertical-cavity surface-emitting lasers

Principal investigator: dr hab. Robert Piotr Sarzała

Politechnika Łódzka, Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej

Call: OPUS 7, Panel: ST7

19. Compact arrays of nitride edge-emitting lasers emitting green light

Principal investigator: Dominika Dąbrówka

Politechnika Łódzka

Call: PRELUDIUM 23, Panel: ST7

20. Study of silicon diffusion phenomenon in different crystallographic directions of gallium nitride

Principal investigator: prof. Michał Stanisław Boćkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 25, Panel: ST5

21. Hexagonal boron nitride for optoelectrics in the DUV range: contacts and conductivity

Principal investigator: dr Jakub Jan Rogoża

Uniwersytet Warszawski, Wydział Fizyki

Call: PRELUDIUM 20, Panel: ST7

22. Point defects in ammonothermal gallium nitride

Principal investigator: dr Marcin Zając

Instytut Wysokich Ciśnień PAN

Call: OPUS 19, Panel: ST5

23. Nitride VCSEL as signal sources in VLC systems

Principal investigator: Patrycja Katarzyna Śpiewak

Politechnika Łódzka, Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej

Call: PRELUDIUM 15, Panel: ST7

24. From nitride micro-LEDs to single photon emitters. Top-down approach.

Principal investigator: prof. Tadeusz Suski

Instytut Wysokich Ciśnień PAN

Call: OPUS 9, Panel: ST7

25. Nitride based green laser diodes

Principal investigator: dr Maciej Jan Kuc

Politechnika Łódzka, Wydział Fizyki Technicznej, Informatyki i Matematyki Stosowanej

Call: SONATA 10, Panel: ST7

26. Determination of the physical properties of polar nitrides multiquantum wells (MQWs) Ga-Al-In-N by ab initio modelling

Principal investigator: dr Paweł Strąk

Instytut Wysokich Ciśnień PAN

Call: SONATA 2, Panel: ST3

27. Controlling n- and p-type doping of (Al,Ga,In)N nanowires grown by molecular beam epitaxy

Principal investigator: dr hab. Marta Sobańska

Instytut Fizyki PAN

Call: OPUS 27, Panel: ST11

28. Mechanisms of Al, Ga, In diffusion in three-dimensional quantum structures of (AlGaIn)N

Principal investigator: prof. Michał Jerzy Leszczyński

Instytut Wysokich Ciśnień PAN

Call: OPUS 24, Panel: ST5

29. Physics of GaN/AlGaN nanowire surfaces – towards more efficient nano-LEDs

Principal investigator: prof. Bogdan Jerzy Kowalski

Instytut Fizyki PAN

Call: OPUS 23, Panel: ST5

30. Monolithic bipolar junction transistor driving LED in group III nitrieds material system

Principal investigator: Mikołaj Hieronim Chlipała

Instytut Wysokich Ciśnień PAN

Call: PRELUDIUM 18, Panel: ST7

31. Diffuse X-ray Scattering from Local Chemical Inhomogeneities in InGaN- experimental verification of theoretical model.

Principal investigator: prof. Michał Jerzy Leszczyński

Instytut Wysokich Ciśnień PAN

Call: OPUS 15, Panel: ST5

32. New method of fabrication of InGaN/GaN quantum wires

Principal investigator: prof. Michał Jerzy Leszczyński

Instytut Wysokich Ciśnień PAN

Call: OPUS 9, Panel: ST5

33. Localized and dipolar excitons and their role in light emission from quantum wells of GaN-InGaN-AlGaN with built-in elec…

Principal investigator: prof. Tadeusz Suski

Instytut Wysokich Ciśnień PAN

Call: OPUS 6, Panel: ST3

34. Influence of hydrostatic pressure and external electric and magnetic fields on topological insulator state in indium-ric…

Principal investigator: dr hab. Sławomir Paweł Łepkowski

Instytut Wysokich Ciśnień PAN

Call: OPUS 4, Panel: ST3

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