Projects funded by the NCN
Ab initio thermodynamics and engineering of point defects in nanometric near-surface areas of III-nitride semiconductors.
2021/41/B/ST5/02764
Keywords:
III-nitrides semiconductors point defects in semiconductors semiconductors doping semiconductors surfaces DFT calculations first principles phonon calculations ab initio thermodynamics
Descriptors:
- ST5_001:
- ST3_002:
- ST8_003:
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: OPUS 21 - announced on 2021-03-15
Amount awarded: 439 100 PLN
Project start date (Y-m-d): 2022-01-13
Project end date (Y-m-d): 2026-01-12
Project duration:: 48 months (the same as in the proposal)
Project status: Pending project
Project description
Download the project description in a pdf file
Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Information in the final report
- Publication in academic press/journals (2)
- Role of Metallic Adlayer in Limiting Ge Incorporation into GaNAuthors:Henryk Turski, Pawel Wolny, Mikolaj Chlipala, Marta Sawicka, Anna Reszka, Pawel Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czeslaw SkierbiszewskiAcademic press:Materials (rok: 2022, tom: 15, strony: 5929), Wydawca: MDPIStatus:PublishedDOI:10.3390/ma15175929 - link to the publication
- Role of Metallic Adlayer in Limiting Ge Incorporation into GaNAuthors:Henryk Turski, Pawel Wolny, Mikolaj Chlipala, Marta Sawicka, Anna Reszka, Pawel Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czeslaw SkierbiszewskiAcademic press:Materials (rok: 2022, tom: 15, strony: 5929), Wydawca: MDPIStatus:PublishedDOI:10.3390/ma15175929 - link to the publication