Projects funded by the NCN

Investigation of mechanisms of strain relaxation in GaSb layers deposited on GaAs substrates by molecular beam epitaxy.

Call: OPUS 6 , Panel: ST7

Principal investigator: dr hab. Agata Jasik

Instytut Technologii Elektronowej

ZnO quantum wells in ZnMgO nanocolumns grown on selected substrates with MBE technique

Call: SONATA 5 , Panel: ST5

Principal investigator: dr Mieczysław Pietrzyk

Instytut Fizyki PAN

Terahertz emission from field-effect transistors

Call: OPUS 2 , Panel: ST7

Principal investigator: dr hab. Jerzy Łusakowski

Uniwersytet Warszawski

Microscopic growth mechanism of InGaN layers and its influence on indium content fluctuations

Call: PRELUDIUM 2 , Panel: ST3

Principal investigator: Henryk Turski

Instytut Wysokich Ciśnień PAN

As-induced VLS-MBE growth of dodecagonal GaN microrods

Call: PRELUDIUM 19 , Panel: ST5

Principal investigator: Paulina Ciechanowicz

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Epitaxial boron nitride - universal platform for novel van der Waals structures

Call: OPUS 17 , Panel: ST5

Principal investigator: prof. Andrzej Wysmołek

Uniwersytet Warszawski, Wydział Fizyki

MBE growth and submicron imaging of local electronic and optical processes in nitride semiconductor nanostructures

Call: OPUS 11 , Panel: ST5

Principal investigator: prof. Bogdan Kowalski

Instytut Fizyki Polskiej Akademii Nauk

Application of electron diffraction RHEED and mass spectroscopy QMS for in-situ analysis of nucleation and MBE growth of...

Call: PRELUDIUM 11 , Panel: ST3

Principal investigator: dr Marta Sobańska

Instytut Fizyki Polskiej Akademii Nauk

Research on MBE heteroepitaxy III-V epilayers on GaAs substrates

Call: OPUS 9 , Panel: ST5

Principal investigator: prof. Antoni Rogalski

Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego, Wydział Nowych Technologii i Chemii