Projects funded by the NCN
Microscopic growth mechanism of InGaN layers and its influence on indium content fluctuations
2011/03/N/ST3/02938
Keywords:
InGaN AFM PL nitrides indium content fluctuations MBE
Descriptors:
- ST3_7: Spintronics
- ST5_4: Thin films
- ST5_1: Structural properties of materials
Panel:
ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics
Host institution :
Instytut Wysokich Ciśnień PAN
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: PRELUDIUM 2 - announced on 2011-09-15
Amount awarded: 395 670 PLN
Project start date (Y-m-d): 2012-08-14
Project end date (Y-m-d): 2014-11-13
Project duration:: 27 months (the same as in the proposal)
Project status: Project settled