Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

Delete all

Research on MBE heteroepitaxy III-V epilayers on GaAs substrates

2015/17/B/ST5/01753

Keywords:

MBE growth IR detector BIRD

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST5_9: Biomaterials, biocompatible materials

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego, Wydział Nowych Technologii i Chemii

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Antoni Rogalski 

Number of co-investigators in the project: 6

Call: OPUS 9 - announced on 2015-03-16

Amount awarded: 1 606 800 PLN

Project start date (Y-m-d): 2016-01-26

Project end date (Y-m-d): 2019-09-25

Project duration:: 44 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Spektrofotometr FT-IR (210 000 PLN)
  2. Ciało doskonale czarne (22 800 PLN)

Information in the final report

  • Publication in academic press/journals (16)
  • Articles in post-conference publications (7)
  • Book publications / chapters in book publications (1)
  1. Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy
    Authors:
    D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
    Academic press:
    Journal of Electronic Materials (rok: 2018, tom: 47, strony: 299-304), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11664-017-5766-4 - link to the publication
  2. Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates
    Authors:
    D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
    Academic press:
    Acta Physica Polonica A (rok: 2017, tom: 132, strony: 322-324), Wydawca: Polish Academy of Sciences Institute of Physics
    Status:
    Published
    DOI:
    10.12693/APhysPolA.132.322 - link to the publication
  3. Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
    Authors:
    D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
    Academic press:
    Optical and Quantum Electronics (rok: 2016, tom: 48, strony: 428), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-016-0698-4 - link to the publication
  4. Photon recycling effect in small pixel p-i-n HgCdTe long wavelength infrared photodiodes
    Authors:
    M. Kopytko, K. Jóźwikowski, P. Martyniuk, A. Rogalski
    Academic press:
    Infrared Physics & Technology (rok: 2019, tom: 97, strony: 38-42), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.infrared.2018.12.015 - link to the publication
  5. Electronic band structure of InAs/InAsSb type-II superlattice for HOT LWIR detectors
    Authors:
    T. Manyk, K. Michalczewski, K. Murawski, K. Grodecki, J. Rutkowski, P. Martyniuk
    Academic press:
    Results in Physics (rok: 2018, tom: 11, strony: 1119–1123), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.rinp.2018.11.030 - link to the publication
  6. Graphene-based materials in the infrared and terahertz detector families: a tutorial
    Authors:
    A. Rogalski
    Academic press:
    Advances in Optics and Photonics (rok: 2019, tom: 11(2), strony: 314-379), Wydawca: OSA Publishing
    Status:
    Published
    DOI:
    10.1364/AOP.11.000314 - link to the publication
  7. InAs/GaSb type-II superlattice infrared detectors: Future prospect
    Authors:
    A. Rogalski, P. Martyniuk, M. Kopytko
    Academic press:
    Applied Physics Reviews (rok: 2017, tom: 4, strony: 31304), Wydawca: American Institute of Physics (AIP)
    Status:
    Published
    DOI:
    10.1063/1.4999077 - link to the publication
  8. Semiconductor contact layer characterization in a context of hall effect measurements
    Authors:
    A. Kowalewski, J. Wróbel, J. Boguski, K. Gorczyca, P. Martyniuk
    Academic press:
    Metrology and Measurement Systems (rok: 2019, tom: 26(1), strony: 109-114), Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
    Status:
    Published
    DOI:
    10.24425/mms.2019.126324 - link to the publication
  9. Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique
    Authors:
    K. Michalczewski, F. Ivaldi, Ł. Kubiszyn, D. Benyahia, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
    Academic press:
    Acta Physica Polonica A (rok: 2017, tom: 132, strony: 325-328), Wydawca: Polish Academy of Sciences Institute of Physics
    Status:
    Published
    DOI:
    10.12693/APhysPolA.132.325 - link to the publication
  10. Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements
    Authors:
    L. Ciura, A. Kolek, E. Gomółka, K. Murawski, M. Kopytko, P. Martyniuk and A. Rogalski
    Academic press:
    Semiconductor Science and Technology (rok: 2019, tom: 34(10), strony: 105017), Wydawca: IOP Science
    Status:
    Published
    DOI:
    10.1088/1361-6641/ab3c02 - link to the publication
  11. Type-II superlattice photodetectors versus HgCdTe photodiodes
    Authors:
    A. Rogalski, P. Martyniuk, M. Kopytko
    Academic press:
    Progress in Quantum Electronics (rok: 2019, tom: 68 (100228), strony: 45310), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.pquantelec.2019.100228 - link to the publication
  12. p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy
    Authors:
    D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
    Academic press:
    Journal of Semiconductor Technology and Science (rok: 2016, tom: 16, strony: 695-701), Wydawca: JSTS
    Status:
    Published
    DOI:
    10.5573/JSTS.2016.16.5.695 - link to the publication
  13. High-operating temperature InAsSb/ AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy
    Authors:
    M. Kopytko, E, Gomółka, P. Martyniuk, P. Madejczyk, J. Rutkowski, A. Rogalski
    Academic press:
    Optical Engineering (rok: 2018, tom: 57(12), strony: 127104-1-6), Wydawca: SPIE
    Status:
    Published
    DOI:
    0.1117/1.OE.57.12.127104 - link to the publication
  14. Numerical analysis of HgCdTe dual‑band infrared detector
    Authors:
    M. Kopytko, W. Gawron, A. Kębłowski, D. Stępień, P. Martyniuk, K. Jóźwikowski
    Academic press:
    Optical and Quantum Electronics (rok: 2019, tom: 51, strony: 62-1-8), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-019-1755-6 - link to the publication
  15. Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
    Authors:
    D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
    Academic press:
    Journal of Crystal Growth (rok: 2018, tom: 483, strony: 26-30), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2017.11.015 - link to the publication
  16. Two-dimensional infrared and terahertz detectors: Outlook and status
    Authors:
    A. Rogalski, M. Koopytko, P. Martyniuk
    Academic press:
    Applied Physics Reviews (rok: 2019, tom: 6, strony: 21316), Wydawca: American Institute of Physics (AIP)
    Status:
    Published
    DOI:
    10.1063/1.5088578 - link to the publication
  1. Next decade in infrared detectors
    Authors:
    A. Rogalski
    Conference:
    Electro-Optical and Infrared Systems: Technology and Applications XIV (rok: 2017, ), Wydawca: SPIE
    Data:
    konferencja 11-14 wrzesień 2017
    Status:
    Published
  2. Long term stability study of InAsSb mid-wave infrared HOT detectors passivated through two step passivation technique
    Authors:
    K. Michalczewski, F. Ivaldi, Ł. Kubiszyn, D. Benyahia, J. Ciosek, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
    Conference:
    13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods (rok: 2018, ), Wydawca: SPIE
    Data:
    konferencja 26 luty - 3 marzec 2018
    Status:
    Published
  3. InAsSb photoluminescence at low temperatures
    Authors:
    K. Murawski, K. Grodecki, P. Martyniuk
    Conference:
    13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods (rok: 2018, ), Wydawca: SPIE
    Data:
    konferencja 26 luty - 3 marzec 2018
    Status:
    Published
  4. InAs/GaSb type-II superlattices versus HgCdTe ternary alloys: future prospect
    Authors:
    A. Rogalski
    Conference:
    Electro-Optical and Infrared Systems: Technology and Applications XIV (rok: 2017, ), Wydawca: SPIE
    Data:
    konferencja 11-14 wrzesień 2017
    Status:
    Published
  5. Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate
    Authors:
    J. Wróbel, K. Grodecki, D. Benyahia, K. Murawski, K. Michalczewski, J. Grzonka, J. Boguski, K. Gorczyca, G.A. Umana-Membreno, Ł. Kubiszyn, A. Kębłowski, P.P.Michałowski, E. Gomółka, P. Martyniuk, J. Piotrowski, A. Rogalski
    Conference:
    13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods (rok: 2018, ), Wydawca: SPIE
    Data:
    konferencja 26 luty - 3 marzec 2018
    Status:
    Published
  6. InAs/GaSb type-II superlattice infrared detectors: three decades of development
    Authors:
    A. Rogalski, M. Kopytko, P. Martyniuk
    Conference:
    Infrared Technology and Applications XLIII (rok: 2017, ), Wydawca: SPIE
    Data:
    konferencja 9-13 kwiecień 2017
    Status:
    Published
  7. Selected technological aspects of semiconductor samples preparation for Hall effect measurements
    Authors:
    K. Gorczyca, J. Boguski, J. Wróbel, P. Martyniuk
    Conference:
    13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods (rok: 2018, ), Wydawca: SPIE
    Data:
    konferencja 26 luty - 3 marzec 2018
    Status:
    Published
  1. -
    Authors:
    A. Rogalski, M. Kopytko, P. Martyniuk
    Book:
    Antimonide-based infrared detectros: A new perspective (rok: 2018, tom: -, strony: 1-273), Wydawca: SPIE Press
    Status:
    Published

O Narodowym Centrum Nauki

Finansowanie nauki

Współpraca zagraniczna

Centrum prasowe

Deklaracja dostępności
Przetwarzanie danych osobowych
Polityka cookies

Partnerzy