Projects funded by the NCN
Investigation of mechanisms of strain relaxation in GaSb layers deposited on GaAs substrates by molecular beam epitaxy.
2013/11/B/ST7/04341
Keywords:
MBE GaSb/GaAs misfit dislocations two-dimensional growth mode
Descriptors:
- ST3_7: Spintronics
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Instytut Technologii Elektronowej
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 8
Call: OPUS 6 - announced on 2013-09-16
Amount awarded: 1 499 040 PLN
Project start date (Y-m-d): 2014-08-27
Project end date (Y-m-d): 2018-02-26
Project duration:: 42 months (the same as in the proposal)
Project status: Project settled