Projects funded by the NCN

Surface functionalization of p-(Al)GaN with MXenes – contact engineering for efficient deep UV emitters

Call: SONATINA 9 , Panel: ST11

Principal investigator: dr Dominika Marianna Majchrzak

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Boron nitride tunnelling heterostructures: an innovative platform for optoelectronics

Call: SONATA BIS 14 , Panel: ST7

Principal investigator: dr hab. Johannes Robert Binder

Uniwersytet Warszawski

Comprehensive study of radiative recombination centers in hexagonal boron nitride single crystals using high-pressure an...

Call: OPUS 26 , Panel: ST3

Principal investigator: dr hab. Agata Kamińska

Uniwersytet Kardynała Stefana Wyszyńskiego w Warszawie

Microcolumnar nitride UV emitters

Call: SONATA BIS 12 , Panel: ST3

Principal investigator: dr Łukasz Krzysztof Janicki

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

Efficient UV light emitters and detectors based on GaN/AlGaN nanowire arrays with buried mirror and bottom metallic elec...

Call: SONATA 17 , Panel: ST7

Principal investigator: dr Marta Maria Sobańska

Instytut Fizyki PAN

The first AlGaN bulk crystal for efficient UV emitters - breaking the barriers in crystallization using GaN seeds of exc...

Call: SONATA 16 , Panel: ST5

Principal investigator: dr Tomasz Sochacki

Instytut Wysokich Ciśnień PAN

Study of synergistic effects between collective and individual amplifying modes in one optical system - towards efficien...

Call: OPUS 19 , Panel: ST5

Principal investigator: dr hab. Małgorzata Norek

Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego, Wydział Nowych Technologii i Chemii

Rocksalt (MgZn)O alloys and (MgZn)O/MgO quantum structure and theirapplication in deep-ultraviolet light-emitters.

Call: OPUS 19 , Panel: ST8

Principal investigator: dr hab. Henryk Grzegorz Teisseyre

Instytut Fizyki PAN

Application of the graded AlGaN contact layer to obtain low resistivity ohmic contact in deep UV emitters

Call: PRELUDIUM 19 , Panel: ST3

Principal investigator: Dominika Marianna Majchrzak

Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

P-type doping of wide gap semiconductor heterostructures dedicated for UV emitters

Call: OPUS 10 , Panel: ST7

Principal investigator: dr Mariusz Rudziński

Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki