Projects funded by the NCN
Application of the graded AlGaN contact layer to obtain low resistivity ohmic contact in deep UV emitters
2020/37/N/ST3/02248
Keywords:
Deep UV emitters AlGaN epitaxy polarization doping ohmic contact
Descriptors:
- ST3_5: Physical properties of semiconductors and insulators
- ST3_4: Electronic properties of materials, surfaces, interfaces, nanostructures, etc.
- ST5_1: Structural properties of materials
Panel:
ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics
Host institution :
Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii
woj. dolnośląskie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: PRELUDIUM 19 - announced on 2020-03-16
Amount awarded: 196 800 PLN
Project start date (Y-m-d): 2021-05-17
Project end date (Y-m-d): 2024-05-16
Project duration:: 36 months (the same as in the proposal)
Project status: Project completed
Project description
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