Projects funded by the NCN
P-type doping of wide gap semiconductor heterostructures dedicated for UV emitters
2015/19/B/ST7/02163
Keywords:
AlGaN p-type doping polarization effects p-i-n junction UV diode
Descriptors:
- ST7_2: Electrical engineering: power components and/or systems
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 6
Call: OPUS 10 - announced on 2015-09-15
Amount awarded: 1 042 800 PLN
Project start date (Y-m-d): 2016-07-07
Project end date (Y-m-d): 2020-01-06
Project duration:: 42 months (the same as in the proposal)
Project status: Project settled
Project description
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