Projects funded by the NCN


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4 projects found matching your search criteria :

  1. Study of phenomena at the metal-semiconductor interface in semiconductor devices based on AlGaN/GaN heterostructures

    Call: SONATA 4 , Panel: ST7

    Principal investigator: dr Wojciech Macherzyński

    Politechnika Wrocławska, Wydział Elektroniki Mikrosystemów i Fotoniki

  2. Ohmic contact to p-type Aluminium Gallium Nitride with high aluminium content

    Call: PRELUDIUM 19 , Panel: ST7

    Principal investigator: Katarzyna Opołczyńska

    Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

  3. Application of the graded AlGaN contact layer to obtain low resistivity ohmic contact in deep UV emitters

    Call: PRELUDIUM 19 , Panel: ST3

    Principal investigator: Dominika Majchrzak

    Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

  4. Doping mechanism of oxygen into GaN thin films by magnetron sputtering and analysis of ohmic contact formation with high...

    Call: PRELUDIUM 16 , Panel: ST7

    Principal investigator: Monika Masłyk

    Instytut Wysokich Ciśnień Polskiej Akademii Nauk