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5 projects found matching your search criteria:

1. 1. Ohmic contact to p-type Aluminium Gallium Nitride with high aluminium content

   Principal investigator: Katarzyna Karolina Opołczyńska

   Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

   Call: PRELUDIUM 19, Panel: ST7

2. 2. Application of the graded AlGaN contact layer to obtain low resistivity ohmic contact in deep UV emitters

   Principal investigator: Dominika Marianna Majchrzak

   Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

   Call: PRELUDIUM 19, Panel: ST3

3. 3. Doping mechanism of oxygen into GaN thin films by magnetron sputtering and analysis of ohmic contact formation with high…

   Principal investigator: Monika Masłyk

   Instytut Wysokich Ciśnień PAN

   Call: PRELUDIUM 16, Panel: ST7

4. 4. Study of phenomena at the metal-semiconductor interface in semiconductor devices based on AlGaN/GaN heterostructures

   Principal investigator: dr Wojciech Piotr Macherzyński

   Politechnika Wrocławska, Wydział Elektroniki Mikrosystemów i Fotoniki

   Call: SONATA 4, Panel: ST7

5. 5. Surface functionalization of p-(Al)GaN with MXenes – contact engineering for efficient deep UV emitters

   Principal investigator: dr Dominika Marianna Majchrzak

   Sieć Badawcza ŁUKASIEWICZ - PORT Polski Ośrodek Rozwoju Technologii

   Call: SONATINA 9, Panel: ST11