Projects funded by the NCN

Application of electron diffraction RHEED and mass spectroscopy QMS for in-situ analysis of nucleation and MBE growth of...

Call: PRELUDIUM 11 , Panel: ST3

Principal investigator: dr Marta Maria Sobańska

Instytut Fizyki PAN

Investigation of the electro-optical semiconductor structures based on gallium nitride (GaN).

Call: PRELUDIUM 1 , Panel: ST3

Principal investigator: Paulina Kamyczek

Politechnika Wrocławska

Nanoengineering of functionalized Au/GaN surface: Dynamics of labile intermolecular interactions on the interface.

Call: PRELUDIUM 10 , Panel: ST8

Principal investigator: Igor Stanisław Dzięcielewski

Instytut Wysokich Ciśnień PAN

Elaboration of manufacturing technology of SERS platforms on functionalized by etching GaN substrates as sensors for exa...

Call: OPUS 10 , Panel: ST8

Principal investigator: dr hab. Jan Weyher

Instytut Wysokich Ciśnień PAN

The application of ion implantation for doping and the formation of highly resistive regions for the purpose of AlGaN/Ga...

Call: SONATA 10 , Panel: ST7

Principal investigator: dr Karolina Pągowska

Instytut Technologii Elektronowej

Explaining the mechanism of d-f luminescence quenching of Ce(3+) and Pr(3+) ions in Sr2GeO4

Call: PRELUDIUM 10 , Panel: ST5

Principal investigator: Karolina Alicja Fiączyk

Uniwersytet Wrocławski, Wydział Chemii

Ferromagnetic stability of spin interaction between local magnetic centers in GaN, BN, SiC and ZnO: GGA+U studies with t...

Call: SONATA 9 , Panel: ST3

Principal investigator: dr Oksana Volnianska

Instytut Fizyki PAN

New method of fabrication of InGaN/GaN quantum wires

Call: OPUS 9 , Panel: ST5

Principal investigator: prof. Michał Jerzy Leszczyński

Instytut Wysokich Ciśnień PAN

Innovative, kinetically stable terbium and europium complexes for advanced biomedical diagnostics

Call: OPUS 9 , Panel: ST5

Principal investigator: dr hab. Marek Pietraszkiewicz

Instytut Chemii Fizycznej Polskiej Akademii Nauk

Modulation spectroscopy of novel nitride semiconductor structures in ultraviolet spectral range

Call: SONATA 9 , Panel: ST7

Principal investigator: dr Magdalena Violetta Latkowska-Baranowska

Politechnika Wrocławska

Optical properties of novel semiconductor materials and structures grown on GaSb and dedicated for applications in the m...

Call: PRELUDIUM 9 , Panel: ST3

Principal investigator: dr Jan Karol Kopaczek

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki