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Investigation of mechanisms of strain relaxation in GaSb layers deposited on GaAs substrates by molecular beam epitaxy.

2013/11/B/ST7/04341

Keywords

Descriptors

  • ST3_7: Półprzewodniki
  • ST7_5: Mikro- i nanoelektronika, optoelektronika

Panel

ST7 – Systems and communication engineering: electronics, communication, optoelectronics

Host institution

Instytut Technologii Elektronowej

Voivodeship: mazowieckie

Other projects carried out by the institution »

Principal investigator (from the host institution)

dr hab. Agata Jasik

Number of co-investigators in the project: 8

Call

OPUS 6 – announced on 2013-09-16

Amount awarded
1 499 040 PLN
Project start date
2014-08-27
Project end date
2018-02-26
Project duration
42 months (the same as in the proposal)
Project status
Project settled

Equipment purchased [PL]

  1. Komputer przenośny Picasso. Cost: 2 069 PLN
  2. Kwadrupolowy spekrometr masowy. Cost: 118 000 PLN
  3. Mikroskop optyczny z kontrastem Nomarskiego. Cost: 450 000 PLN
  4. Zestaw komputerowy wraz z wyposażeniem i akcesoriami. Cost: 7 000 PLN

Information in the final report

Publication in academic press/journals (10)

  1. Noise and detectivity of InAs/GaSb T2SL 4.5 μm IR detectors

    Authors:
    Andrzej Kolek, Łukasz Ciura, Krzysztof Czuba, Agata Jasik, Jarosław Jureńczyk, Iwona Sankowska, and Janusz Kaniewski
    Academic press:
    Proceedings of SPIE (year: 2017, volume: 10404, pages: 1040402-1 - 1040402-10), Publisher: SPIE
    Status:
    Published
    DOI:
    10.1117/12.2272722 – link to the publication

  2. Detektory na bazie supersieci II rodzaju InAs/GaSb dla zakresu promieniowania średniej podczerwieni

    Authors:
    J. Kaniewski, A. Jasik, I. Sankowska, K. Czuba, E. Papis-Polakowska, J. Jureńczyk, M. Sakowicz, K. Regiński
    Academic press:
    Elektronika (year: 2016, volume: LVII, pages: 27-34), Publisher: SIGMA-NOT Sp. z o.o.
    Status:
    Published
    DOI:
    10.15199/13.2016.8.3 – link to the publication

  3. GaSb Layers With Low Defect Density Deposited On (001) GaAs Substrate In Two-Dimensional Growth Mode Using Molecular Beam Epitaxy

    Authors:
    Agata Jasik, Iwona Sankowska, Andrzej Wawro, Jacek Ratajczak, Dariusz Smoczyński, Krzysztof Czuba
    Academic press:
    Current Applied Physics (year: 2019, volume: 19, pages: 542-547), Publisher: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.cap.2019.02.012 – link to the publication

  4. Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE

    Authors:
    A. Jasik, I. Sankowska, J. Ratajczak, A. Wawro, D. Smoczyński, K. Czuba, M. Wzorek
    Academic press:
    Current Applied Physics (year: 2019, volume: 19, pages: 120-127), Publisher: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.cap.2018.11.017 – link to the publication

  5. Detektory supersieciowe InAs/GaSb ˗ wybrane aspekty technologii wytwarzania

    Authors:
    K. Czuba, I. Sankowska, A. Jasik, J. Jureńczyk, E. Papis-Polakowska, P. Kaźmierczyk, J. Kaniewski
    Academic press:
    Elektronika (year: 2016, volume: LVII, pages: 46090), Publisher: SIGMA-NOT Sp. z o.o.
    Status:
    Published
    DOI:
    10.15199/13.2016.9.1 – link to the publication

  6. Absorption and dispersion in undoped epitaxial GaSb layer

    Authors:
    Michał Wasiak , Marcin Motyka, Tristan Smołka, Jacek Ratajczak and Agata Jasik
    Academic press:
    Materials Research Express (year: 2018, volume: 5, pages: 25907), Publisher: IOP Publishing
    Status:
    Published
    DOI:
    10.1088/2053-1591/aaae86 – link to the publication

  7. Below-band-gap absorption in undoped GaAs at elevated temperatures

    Authors:
    Michał Wasiak, Jarosław Walczak, Marcin Motyka, Filip Janiak, Artur Trajnerowicz, Agata Jasik
    Academic press:
    Optical Materials (year: 2017, volume: 64, pages: 137-141), Publisher: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.optmat.2016.11.028 – link to the publication

  8. Influence of Be doping placement in InAs/ GaSb superlattice-based absorber on the performance of MWIR photodiodes

    Authors:
    K Czuba, I Sankowska, J Jureńczyk, A Jasik, E Papis-Polakowska and J Kaniewski
    Academic press:
    Semiconductor Science and Technology (year: 2017, volume: 32, pages: 055010 (9pp)), Publisher: IOP Publishing Ltd
    Status:
    Published
    DOI:
    10.1088/1361-6641/aa62c0 – link to the publication

  9. Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol

    Authors:
    E. Papis-Polakowska, J. Kaniewski, J. Jurenczyk, A. Jasik, K. Czuba, A.E. Walkiewicz,J. Szade
    Academic press:
    AIP Advances (year: 2016, volume: 6, pages: 55206), Publisher: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/1.4949754 – link to the publication

  10. Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

    Authors:
    Agata Jasik, Iwona Sankowska, Andrzej Wawro, Jacek Ratajczak, Rafał Jakieła, Dorota Pierścińska, Dariusz Smoczyński, Krzysztof Czuba, Kazimierz Regiński
    Academic press:
    Applied Physics A (year: 2018, volume: 124:512, pages: 12pp), Publisher: Springer
    Status:
    Published
    DOI:
    10.1007/s00339-018-1931-8 – link to the publication

Articles in post-conference publications (1)

  1. Detektory supersieciowe InAs/GaSb na zakres średniej podczerwieni

    Authors:
    A. Jasik, I. Sankowska, K. Czuba, E. Papis-Polakowska, M. Sakowicz, J. Kaniewski
    Conference:
    II Konferencja Optoelektroniczna (year: 2016, pages: 22-25), Publisher: PCO S.A., PPTF, WAT, PW
    Date:
    conference 12-13.10.2016
    Status:
    Published

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