The method for calculation of carrier concentration in narrow-gap n-type doped Hg1-xCdxTe structures
Authors:
A. Jóźwikowska, K. Jóźwikowski, M. Suligowski, P. Moszczyński, M. Nietopiel
Academic press:
Optical and Quantum Electronics (rok: 2017, tom: 49, strony: 121 (1-8)), Wydawca: Springer
The Non-Equilibrium Statistical Distribution Function for Electrons and Holes in Semiconductor Heterostructures in Steady-State Conditions
Authors:
K. Jóźwikowski, A. Jóźwikowska, M. Nietopiel
Academic press:
Entropy (rok: 2015, tom: 17, strony: 4110-4133), Wydawca: MDPI (Multidisciplinary Digital Publishing Institute)
nBn HgCdTe infrared detector with HgTe(HgCdTe)/CdTe SLs barrier
Authors:
D. Benyahia, P. Martyniuk, M. Kopytko, J. Antoszewski, W. Gawron, P. Madejczyk, J. Rutkowski, R. Gu, L. Faraone
Academic press:
Optical And Quantum Electronics (rok: 2016, tom: 48, strony: 215-1-8), Wydawca: Springer
HgCdTe barrier infrared detectors
Authors:
M. Kopytko, and A. Rogalski
Academic press:
Progress in Quantum Electronics (rok: 2016, tom: 47, strony: 45675), Wydawca: Elsevier
Dislocations as a Noise Source in LWIR HgCdTe Photodiodes
Authors:
K. Jóźwikowski, A. Jóźwikowska, A. Martyniuk
Academic press:
Journal of Electronic Materials (rok: 2016, tom: Online first, strony: 45670), Wydawca: Springer
Langevin-like method for modelling the noise currents in HgCdTe barrier LWIR detectors
Academic press:
Optical and Quantum Electronics (rok: 2017, tom: 49, strony: 101 (1-10)), Wydawca: Springer
The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions
Authors:
K. Jóźwikowski, A. Jóźwikowska, M. Nietopiel
Academic press:
Optical ans Quantum Electronics (rok: 2017, tom: 49, strony: 98 (1-9)), Wydawca: Springer
Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology
Authors:
M. Kopytko, K. Jóźwikowski, P. Martyniuk, W. Gawron, P. Madejczyk, A. Kowalewski, O. Markowska, A. Rogalski, J. Rutkowski
Academic press:
Journal of Electronics Materials (rok: 2016, tom: vol45(9), strony: 4563-4573), Wydawca: Springer
The numerical-experimental enhanced analysis of hot MCT barrier infrared detectors
Authors:
K. Jóźwikowski, J. Piotrowski, A. Jóźwikowska, M. Kopytko, P. Martyniuk, W. Gawron, P. Madejczyk, A. Kowalewski, O. Markowska, A. Martyniuk and A. Rogalski
Academic press:
Journal of Electronics Materials (rok: 2017, tom: 46, strony: 5471), Wydawca: Springer
Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode
Authors:
M. Kopytko, K. Jóźwikowski, A. Rogalski
Academic press:
Solid-State Electronics (rok: 2014, tom: 100, strony: 20–26), Wydawca: ScienceDirect
Interface influence on the long-wave Auger suppressed multilayer N+P+p+n+ HgCdTe HOT detector performance
Authors:
Piotr Martyniuk, Małgorzata Kopytko, Artur Kębłowski, Kacper Grodecki, Waldemar Gawron, Emilia Gomułka
Academic press:
IEEE SENSORS JOURNAL VOL. 17, NO. 3, FEBRUARY 1, 2017 (rok: 2017, tom: 17, strony: 674-678), Wydawca: IEEE USA
Theoretical utmost performance of (100) mid-wave HgCdTe photodetectors
Authors:
P. Martyniuk, W. Gawron, P. Madejczyk, M. Kopytko, K. Grodecki, E. Gomułka
Academic press:
Optical and Quantum Electronics (rok: 2017, tom: 49, strony: 20 (1-8)), Wydawca: Springer
Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors
Authors:
M. Kopytko, J. Wróbel, K. Jóźwikowski,A. Rogalski, J. Antoszewski, N. D. Akhavan, G. A. Umana-Membreno, L. Faraone, C. R. Becker
Academic press:
Journal of Electronic Materials (rok: 2014, tom: 44, strony: 158-166), Wydawca: Springer
The numerical-experimental enhanced analysis of hot MCT barrier infrared detectors
Authors:
K. Jóźwikowski, J. Piotrowski, A. Jóźwikowska, M. Kopytko, P. Martyniuk, W. Gawron, P. Madejczyk, A. Kowalewski, O. Markowska, A. Martyniuk and A. Rogalski
Academic press:
Journal of Electronics Materials (rok: 2017, tom: 46, strony: 5471), Wydawca: Springer
Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode
Authors:
M. Kopytko, K. Jóźwikowski, A. Rogalski
Academic press:
Solid-State Electronics (rok: 2014, tom: 100, strony: 20–26), Wydawca: ScienceDirect
LWIR HgCdTe barrier photodiode with Auger-suppression
Authors:
M. Kopytko, A. Kębłowski, W. Gawron, and W. Pusz
Academic press:
Semiconductor Science and Technology (rok: 2016, tom: 31, strony: 35025), Wydawca: IOPscience
Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology
Authors:
M. Kopytko, K. Jóźwikowski, P. Martyniuk, W. Gawron, P. Madejczyk, A. Kowalewski, O. Markowska, A. Rogalski, J. Rutkowski
Academic press:
Journal of Electronics Materials (rok: 2016, tom: vol45(9), strony: 4563-4573), Wydawca: Springer
Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors
Authors:
M. Kopytko, J. Wróbel, K. Jóźwikowski,A. Rogalski, J. Antoszewski, N. D. Akhavan, G. A. Umana-Membreno, L. Faraone, C. R. Becker
Academic press:
Journal of Electronic Materials (rok: 2014, tom: 44, strony: 158-166), Wydawca: Springer
The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions
Authors:
K. Jóźwikowski, A. Jóźwikowska, M. Nietopiel
Academic press:
Optical ans Quantum Electronics (rok: 2017, tom: 49, strony: 98 (1-9)), Wydawca: Springer
Interface influence on the long-wave Auger suppressed multilayer N+P+p+n+ HgCdTe HOT detector performance
Authors:
Piotr Martyniuk, Małgorzata Kopytko, Artur Kębłowski, Kacper Grodecki, Waldemar Gawron, Emilia Gomułka
Academic press:
IEEE SENSORS JOURNAL VOL. 17, NO. 3, FEBRUARY 1, 2017 (rok: 2017, tom: 17, strony: 674-678), Wydawca: IEEE USA
nBn HgCdTe infrared detector with HgTe(HgCdTe)/CdTe SLs barrier
Authors:
D. Benyahia, P. Martyniuk, M. Kopytko, J. Antoszewski, W. Gawron, P. Madejczyk, J. Rutkowski, R. Gu, L. Faraone
Academic press:
Optical And Quantum Electronics (rok: 2016, tom: 48, strony: 215-1-8), Wydawca: Springer
HgCdTe barrier infrared detectors
Authors:
M. Kopytko, and A. Rogalski
Academic press:
Progress in Quantum Electronics (rok: 2016, tom: 47, strony: 45675), Wydawca: Elsevier