Projects funded by the NCN


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2 projects found matching your search criteria :

  1. Investigation of mechanisms of strain relaxation in GaSb layers deposited on GaAs substrates by molecular beam epitaxy.

    Call: OPUS 6 , Panel: ST7

    Principal investigator: dr hab. Agata Jasik

    Instytut Technologii Elektronowej

  2. Influence of GaN crystal anisotropy on the properties of InGaN and AlGaN layers and quantum structures on nonpolar (10-1...

    Call: PRELUDIUM 2 , Panel: ST3

    Principal investigator: dr Marta Sawicka

    Instytut Wysokich Ciśnień PAN