Projects funded by the NCN
Studies on resistive switching mechanisms in thin-film memory structures based on copper (II) oxide
2022/45/N/ST5/02535
Keywords:
copper oxide resistive switching effect memory effect memristor electrical properties
Descriptors:
- ST5_4: Thin films
- ST3_1: Structure of solids, material growth and characterisation
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Instytut Fizyki Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 2
Call: PRELUDIUM 21 - announced on 2022-03-28
Amount awarded: 139 680 PLN
Project start date (Y-m-d): 2023-01-09
Project end date (Y-m-d): 2025-01-08
Project duration:: 24 months (the same as in the proposal)
Project status: Pending project
Project description
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