Projects funded by the NCN
In-situ studies of plastic relaxation in InGaN buffers serving as substrates for overcoming current incorporation barriers in high In content nitride epitaxial layers
2020/39/I/ST5/03379
Keywords:
InGaN substrates strain relaxation in-situ transmission electron microscopy in-situ x-ray diffraction dislocation kinetics high Indium content InGaN layers
Descriptors:
- ST5_2: Solid-state materials
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 5
Call: OPUS 20 (LAP) - announced on 2020-09-15
Amount awarded: 991 740 PLN
Project start date (Y-m-d): 2021-12-07
Project end date (Y-m-d): 2024-12-06
Project duration:: 36 months (the same as in the proposal)
Project status: Pending project
Project description
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