Projects funded by the NCN


Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Circumvention of piezoelectric fields in III-nitride heterostructures – a way towards solving the green gap problem

2019/35/D/ST3/03008

Keywords:

InGaN quantum wells piezoelectric fields light emitting diodes molecular beam epitaxy

Descriptors:

  • ST3_10: Nanophysics: nanoelectronics, nanophotonics, nanomagnetism, nanoelectromechanics, etc.
  • ST5_4: Thin films

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Instytut Wysokich Ciśnień Polskiej Akademii Nauk

woj.

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Grzegorz Muzioł 

Number of co-investigators in the project: 4

Call: SONATA 15 - announced on 2019-09-16

Amount awarded: 1 385 887 PLN

Project start date (Y-m-d): 2020-07-09

Project end date (Y-m-d): 2024-07-08

Project duration:: 48 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (59)
  1. Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy
    Authors:
    N. Fiuczek, M. Hajdel, A. Kafar, G.Muziol, M. Siekacz, A. Feduniewicz-Żmuda, O. Gołyga, C. Skierbiszewski and M. Sawicka
    Academic press:
    Optical Materials Express (rok: 2023, tom: 13, strony: 1201), Wydawca: Optica Publishing Group
    Status:
    Published
    DOI:
    10.1364/OME.485588 - link to the publication
  2. Bidirectional light-emitting diode as a visible light source driven by alternating current
    Authors:
    M. Żak, G. Muziol, M. Siekacz, A. Bercha, M. Hajdel, K. Nowakowski-Szkudlarek, A. Lachowski, M. Chlipała, P. Wolny, H. Turski, and C. Skierbiszewski
    Academic press:
    Nature Communications (rok: 2023, tom: 14, strony: 7562), Wydawca: Nature
    Status:
    Published
    DOI:
    10.1038/s41467-023-43335-7 - link to the publication
  3. Light emission at reverse voltage in a wide-well (In, Ga)N/GaN light-emitting diode
    Authors:
    Artem Bercha, Konrad Sakowski, Grzegorz Muziol, Mateusz Hajdel, and Witold Trzeciakowski
    Academic press:
    PHYSICAL REVIEW APPLIED (rok: 2024, tom: 21, strony: 54030), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevApplied.21.054030 - link to the publication
  4. Long-Lived Excitations in Wide ( In , Ga ) N / Ga N Quantum Wells
    Authors:
    A. Bercha, G. Muziol, M. Chlipala, and W. Trzeciakowski
    Academic press:
    Physical Review Applied (rok: 2023, tom: 20, strony: 34040), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevApplied.20.034040 - link to the publication
  5. III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources
    Authors:
    G. Muziol, M. Hajdel, M. Siekacz, H. Turski, K. Pieniak, A. Bercha, W. Trzeciakowski, R. Kudrawiec, T. Suski, and C. Skierbiszewski
    Academic press:
    Japanese Journal of Applied Physics (rok: 2021, tom: 61, strony: SA0801), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.35848/1347-4065/ac3c1a - link to the publication
  6. Dynamical Behavior of a Stacked Blue Laser Diode Consisting of Two Active Regions with Wide InGaN Quantum Wells and Two Tunnel Junctions
    Authors:
    Jannina Tepaβ, Lukas Uhlig, Mateusz Hajdel, Marcin Siekacz, Grzegorz Muziol, Ulrich Theodor Schwarz
    Academic press:
    physica status solidi (a) (rok: 2024, tom: nie dotyczy, strony: 2400071), Wydawca: Wiley
    Status:
    Published
    DOI:
    10.1002/pssa.202400071 - link to the publication
  7. Theoretical and Experimental Studies on Material Gain for Wide Polar InGaN Quantum Well-Mechanism Leading to Electric Field Screening and Lasing
    Authors:
    M. Gładysiewicz, R. Kudrawiec, G. Muzioł, H. Turski, and C. Skierbiszewski
    Academic press:
    Advanced Physics Research (rok: 2023, tom: 2, strony: 2200107), Wydawca: Wiley
    Status:
    Published
    DOI:
    10.1002/apxr.202200107 - link to the publication
  8. Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions
    Authors:
    M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, and C. Skierbiszewski
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1481), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091481 - link to the publication
  9. Electrically pumped blue laser diodes with nanoporous bottom cladding
    Authors:
    Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, Mateusz Hajdel, Marcin Siekacz, Anna Feduniewicz-Żmuda, Krzesimir Nowakowski-Szkudlarek, Paweł Wolny, Mikołaj Żak, Henryk Turski, and Czesław Skierbiszewski
    Academic press:
    Optics Express (rok: 2022, tom: 30, strony: 10709-10722), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.454359 - link to the publication
  10. Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions
    Authors:
    M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, and C. Skierbiszewski
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1481), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091481 - link to the publication
  11. Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
    Authors:
    M. Hajdel, M. Chlipała, M. Siekacz, H. Turski, P. Wolny, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, C. Skierbiszewski, and G. Muziol
    Academic press:
    Materials (rok: 2021, tom: 15, strony: 237), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15010237 - link to the publication
  12. Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices
    Authors:
    M. Żak, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, M. Chlipała, A. Lachowski, and C. Skierbiszewski
    Academic press:
    Physical Review Applied (rok: 2021, tom: 15, strony: 24046), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    PhysRevApplied.15.024046 - link to the publication
  13. Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells
    Authors:
    Jannina Tepaß, Lukas Uhlig, Mateusz Hajdel, Grzegorz Muziol, Ulrich T. Schwarz
    Academic press:
    Phys. Status Solidi A (rok: 2023, tom: 220, strony: 2300042), Wydawca: Wiley
    Status:
    Published
    DOI:
    10.1002/pssa.202300042 - link to the publication
  14. Evidence for dark charge" from photoluminescence measurements in wide InGaN quantum wells
    Authors:
    A. Bercha, W. Trzeciakowski, G. Muziol, J. W. Tomm, and T. Suski
    Academic press:
    Optics Express (rok: 2023, tom: 31, strony: 3227), Wydawca: Optica Publishing Group
    Status:
    Published
    DOI:
    10.1364/OE.480074 - link to the publication
  15. Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs
    Authors:
    K. Pieniak, W. Trzeciakowski, G. Muzioł, A. Kafar, M. Siekacz, C. Skierbiszewski, and T. Suski
    Academic press:
    Optics Express (rok: 2021, tom: 29, strony: 40804-40818), Wydawca: Optic
    Status:
    Published
    DOI:
    10.1364/OE.441387 - link to the publication
  16. Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions
    Authors:
    M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, and C. Skierbiszewski
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1481), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091481 - link to the publication
  17. Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
    Authors:
    M. Hajdel, M. Chlipała, M. Siekacz, H. Turski, P. Wolny, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, C. Skierbiszewski, and G. Muziol
    Academic press:
    Materials (rok: 2021, tom: 15, strony: 237), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15010237 - link to the publication
  18. Bidirectional light-emitting diode as a visible light source driven by alternating current
    Authors:
    M. Żak, G. Muziol, M. Siekacz, A. Bercha, M. Hajdel, K. Nowakowski-Szkudlarek, A. Lachowski, M. Chlipała, P. Wolny, H. Turski, and C. Skierbiszewski
    Academic press:
    Nature Communications (rok: 2023, tom: 14, strony: 7562), Wydawca: Nature
    Status:
    Published
    DOI:
    10.1038/s41467-023-43335-7 - link to the publication
  19. Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy
    Authors:
    N. Fiuczek, M. Hajdel, A. Kafar, G.Muziol, M. Siekacz, A. Feduniewicz-Żmuda, O. Gołyga, C. Skierbiszewski and M. Sawicka
    Academic press:
    Optical Materials Express (rok: 2023, tom: 13, strony: 1201), Wydawca: Optica Publishing Group
    Status:
    Published
    DOI:
    10.1364/OME.485588 - link to the publication
  20. Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction
    Authors:
    K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S. Grzanka, C. Skierbiszewski, and T. Suski
    Academic press:
    Optics Express (rok: 2021, tom: 29, strony: 1824-1837), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.415258 - link to the publication
  21. Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs
    Authors:
    K. Pieniak, W. Trzeciakowski, G. Muzioł, A. Kafar, M. Siekacz, C. Skierbiszewski, and T. Suski
    Academic press:
    Optics Express (rok: 2021, tom: 29, strony: 40804-40818), Wydawca: Optic
    Status:
    Published
    DOI:
    10.1364/OE.441387 - link to the publication
  22. Fabrication of GaN-air channels for embedded photonic structures
    Authors:
    M. Sawicka, O. Gołyga, N. Fiuczek, G. Muzioł, A. Feduniewicz-Żmuda, M. Siekacz, H. Turski, R. Czernecki, E. Grzanka, I. Prozheev, F. Tuomisto, and C. Skierbiszewski
    Academic press:
    Materials Science in Semiconductor Processing (rok: 2023, tom: 155, strony: 107234), Wydawca: ELSEVIER
    Status:
    Published
    DOI:
    10.1016/j.mssp.2022.107234 - link to the publication
  23. Long-Lived Excitations in Wide ( In , Ga ) N / Ga N Quantum Wells
    Authors:
    A. Bercha, G. Muziol, M. Chlipala, and W. Trzeciakowski
    Academic press:
    Physical Review Applied (rok: 2023, tom: 20, strony: 34040), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevApplied.20.034040 - link to the publication
  24. III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources
    Authors:
    G. Muziol, M. Hajdel, M. Siekacz, H. Turski, K. Pieniak, A. Bercha, W. Trzeciakowski, R. Kudrawiec, T. Suski, and C. Skierbiszewski
    Academic press:
    Japanese Journal of Applied Physics (rok: 2021, tom: 61, strony: SA0801), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.35848/1347-4065/ac3c1a - link to the publication
  25. Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
    Authors:
    M. Hajdel, M. Chlipała, M. Siekacz, H. Turski, P. Wolny, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, C. Skierbiszewski, and G. Muziol
    Academic press:
    Materials (rok: 2021, tom: 15, strony: 237), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15010237 - link to the publication
  26. Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions
    Authors:
    M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, and C. Skierbiszewski
    Academic press:
    Electronics (rok: 2020, tom: 9, strony: 1481), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/electronics9091481 - link to the publication
  27. III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources
    Authors:
    G. Muziol, M. Hajdel, M. Siekacz, H. Turski, K. Pieniak, A. Bercha, W. Trzeciakowski, R. Kudrawiec, T. Suski, and C. Skierbiszewski
    Academic press:
    Japanese Journal of Applied Physics (rok: 2021, tom: 61, strony: SA0801), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.35848/1347-4065/ac3c1a - link to the publication
  28. Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices
    Authors:
    M. Żak, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, M. Chlipała, A. Lachowski, and C. Skierbiszewski
    Academic press:
    Physical Review Applied (rok: 2021, tom: 15, strony: 24046), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    PhysRevApplied.15.024046 - link to the publication
  29. Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction
    Authors:
    K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S. Grzanka, C. Skierbiszewski, and T. Suski
    Academic press:
    Optics Express (rok: 2021, tom: 29, strony: 1824-1837), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.415258 - link to the publication
  30. GaN-based bipolar cascade lasers with 25 nm wide quantum wells
    Authors:
    J. Piprek, G. Muziol, M. Siekacz, and C. Skierbiszewski
    Academic press:
    Optical and Quantum Electronics (rok: 2022, tom: 54, strony: 62), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-021-03455-0 - link to the publication
  31. Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy
    Authors:
    G. Muziol, M. Hajdel, H. Turski, K. Nomoto, M. Siekacz, K. Nowakowski-Szkudlarek, M. Żak, D. Jena, H. G. Xing, P. Perlin, and C. Skierbiszewski
    Academic press:
    Optics Express (rok: 2020, tom: 28, strony: 35321-35329), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.405994 - link to the publication
  32. Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content (In,Ga)N Quantum Wells
    Authors:
    P. Wolny, H. Turski, G. Muziol, M. Sawicka, J. Smalc-Koziorowska, J. Moneta, M. Hajdel, A. Feduniewicz-Żmuda, S. Grzanka, R. Kudrawiec, and C. Skierbiszewski
    Academic press:
    Physical Review Applied (rok: 2023, tom: 19, strony: 14044), Wydawca: American Physics Society
    Status:
    Published
    DOI:
    10.1103/PhysRevApplied.19.014044 - link to the publication
  33. Fabrication of GaN-air channels for embedded photonic structures
    Authors:
    M. Sawicka, O. Gołyga, N. Fiuczek, G. Muzioł, A. Feduniewicz-Żmuda, M. Siekacz, H. Turski, R. Czernecki, E. Grzanka, I. Prozheev, F. Tuomisto, and C. Skierbiszewski
    Academic press:
    Materials Science in Semiconductor Processing (rok: 2023, tom: 155, strony: 107234), Wydawca: ELSEVIER
    Status:
    Published
    DOI:
    10.1016/j.mssp.2022.107234 - link to the publication
  34. Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy
    Authors:
    G. Muziol, M. Hajdel, H. Turski, K. Nomoto, M. Siekacz, K. Nowakowski-Szkudlarek, M. Żak, D. Jena, H. G. Xing, P. Perlin, and C. Skierbiszewski
    Academic press:
    Optics Express (rok: 2020, tom: 28, strony: 35321-35329), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.405994 - link to the publication
  35. GaN-based bipolar cascade lasers with 25 nm wide quantum wells
    Authors:
    J. Piprek, G. Muziol, M. Siekacz, and C. Skierbiszewski
    Academic press:
    Optical and Quantum Electronics (rok: 2022, tom: 54, strony: 62), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-021-03455-0 - link to the publication
  36. Electrically pumped blue laser diodes with nanoporous bottom cladding
    Authors:
    Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, Mateusz Hajdel, Marcin Siekacz, Anna Feduniewicz-Żmuda, Krzesimir Nowakowski-Szkudlarek, Paweł Wolny, Mikołaj Żak, Henryk Turski, and Czesław Skierbiszewski
    Academic press:
    Optics Express (rok: 2022, tom: 30, strony: 10709-10722), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.454359 - link to the publication
  37. Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes
    Authors:
    J. Slawinska, G. Muziol, M. Siekacz, H. Turski, M. Hajdel, M. Zak, A. Feduniewicz-Zmuda, G. Staszczak, and C. Skierbiszewski
    Academic press:
    Optics Express (rok: 2022, tom: 30, strony: 27004-27014), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.458950 - link to the publication
  38. GaN-based bipolar cascade lasers with 25 nm wide quantum wells
    Authors:
    J. Piprek, G. Muziol, M. Siekacz & C. Skierbiszewski
    Academic press:
    Optical and Quantum Electronics (rok: 2022, tom: 54, strony: 62), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-021-03455-0 - link to the publication
  39. Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs
    Authors:
    K. Pieniak, W. Trzeciakowski, G. Muzioł, A. Kafar, M. Siekacz, C. Skierbiszewski, and T. Suski
    Academic press:
    Optics Express (rok: 2021, tom: 29, strony: 40804-40818), Wydawca: Optic
    Status:
    Published
    DOI:
    10.1364/OE.441387 - link to the publication
  40. III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources
    Authors:
    G. Muziol, M. Hajdel, M. Siekacz, H. Turski, K. Pieniak, A. Bercha, W. Trzeciakowski, R. Kudrawiec, T. Suski, and C. Skierbiszewski
    Academic press:
    Japanese Journal of Applied Physics (rok: 2021, tom: 61, strony: SA0801), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.35848/1347-4065/ac3c1a - link to the publication
  41. Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy
    Authors:
    G. Muziol, M. Hajdel, H. Turski, K. Nomoto, M. Siekacz, K. Nowakowski-Szkudlarek, M. Żak, D. Jena, H. G. Xing, P. Perlin, and C. Skierbiszewski
    Academic press:
    Optics Express (rok: 2020, tom: 28, strony: 35321-35329), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.405994 - link to the publication
  42. Transition between quantum confinement and bulklike behavior in polar quantum wells
    Authors:
    Lukas Uhlig, Jannina Tepaß, Mateusz Hajdel, Grzegorz Muziol, and Ulrich T. Schwarz
    Academic press:
    Phys. Rev. B (rok: 2023, tom: 108, strony: 45304), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevB.108.045304 - link to the publication
  43. Electrically pumped blue laser diodes with nanoporous bottom cladding
    Authors:
    Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, Mateusz Hajdel, Marcin Siekacz, Anna Feduniewicz-Żmuda, Krzesimir Nowakowski-Szkudlarek, Paweł Wolny, Mikołaj Żak, Henryk Turski, and Czesław Skierbiszewski
    Academic press:
    Optics Express (rok: 2022, tom: 30, strony: 10709-10722), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.454359 - link to the publication
  44. Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells
    Authors:
    Jannina Tepaß, Lukas Uhlig, Mateusz Hajdel, Grzegorz Muziol, Ulrich T. Schwarz
    Academic press:
    Phys. Status Solidi A (rok: 2023, tom: 220, strony: 2300042), Wydawca: Wiley
    Status:
    Published
    DOI:
    10.1002/pssa.202300042 - link to the publication
  45. Competition between built-in polarization and p–n junction field in III-nitride heterostructures
    Authors:
    H. Turski, M. Chlipala, E. Zdanowicz, E. Rogowicz, G. Muziol, J. Moneta, S. Grzanka, M. Kryśko, M. Syperek, R. Kudrawiec, and C. Skierbiszewski
    Academic press:
    Journal of Applied Physics (rok: 2023, tom: 134, strony: 243105), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0177614 - link to the publication
  46. Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content (In,Ga)N Quantum Wells
    Authors:
    P. Wolny, H. Turski, G. Muziol, M. Sawicka, J. Smalc-Koziorowska, J. Moneta, M. Hajdel, A. Feduniewicz-Żmuda, S. Grzanka, R. Kudrawiec, and C. Skierbiszewski
    Academic press:
    Physical Review Applied (rok: 2023, tom: 19, strony: 14044), Wydawca: American Physics Society
    Status:
    Published
    DOI:
    10.1103/PhysRevApplied.19.014044 - link to the publication
  47. Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy
    Authors:
    G. Muziol, M. Hajdel, H. Turski, K. Nomoto, M. Siekacz, K. Nowakowski-Szkudlarek, M. Żak, D. Jena, H. G. Xing, P. Perlin, and C. Skierbiszewski
    Academic press:
    Optics Express (rok: 2020, tom: 28, strony: 35321-35329), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.405994 - link to the publication
  48. Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction
    Authors:
    K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S. Grzanka, C. Skierbiszewski, and T. Suski
    Academic press:
    Optics Express (rok: 2021, tom: 29, strony: 1824-1837), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.415258 - link to the publication
  49. Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs
    Authors:
    K. Pieniak, W. Trzeciakowski, G. Muzioł, A. Kafar, M. Siekacz, C. Skierbiszewski, and T. Suski
    Academic press:
    Optics Express (rok: 2021, tom: 29, strony: 40804-40818), Wydawca: Optic
    Status:
    Published
    DOI:
    10.1364/OE.441387 - link to the publication
  50. Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes
    Authors:
    J. Slawinska, G. Muziol, M. Siekacz, H. Turski, M. Hajdel, M. Zak, A. Feduniewicz-Zmuda, G. Staszczak, and C. Skierbiszewski
    Academic press:
    Optics Express (rok: 2022, tom: 30, strony: 27004-27014), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.458950 - link to the publication
  51. Competition between built-in polarization and p–n junction field in III-nitride heterostructures
    Authors:
    H. Turski, M. Chlipala, E. Zdanowicz, E. Rogowicz, G. Muziol, J. Moneta, S. Grzanka, M. Kryśko, M. Syperek, R. Kudrawiec, and C. Skierbiszewski
    Academic press:
    Journal of Applied Physics (rok: 2023, tom: 134, strony: 243105), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0177614 - link to the publication
  52. Theoretical and Experimental Studies on Material Gain for Wide Polar InGaN Quantum Well-Mechanism Leading to Electric Field Screening and Lasing
    Authors:
    M. Gładysiewicz, R. Kudrawiec, G. Muzioł, H. Turski, and C. Skierbiszewski
    Academic press:
    Advanced Physics Research (rok: 2023, tom: 2, strony: 2200107), Wydawca: Wiley
    Status:
    Published
    DOI:
    10.1002/apxr.202200107 - link to the publication
  53. Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices
    Authors:
    M. Żak, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, M. Chlipała, A. Lachowski, and C. Skierbiszewski
    Academic press:
    Physical Review Applied (rok: 2021, tom: 15, strony: 24046), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    PhysRevApplied.15.024046 - link to the publication
  54. Transition between quantum confinement and bulklike behavior in polar quantum wells
    Authors:
    Lukas Uhlig, Jannina Tepaß, Mateusz Hajdel, Grzegorz Muziol, and Ulrich T. Schwarz
    Academic press:
    Phys. Rev. B (rok: 2023, tom: 108, strony: 45304), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevB.108.045304 - link to the publication
  55. Evidence for dark charge" from photoluminescence measurements in wide InGaN quantum wells
    Authors:
    A. Bercha, W. Trzeciakowski, G. Muziol, J. W. Tomm, and T. Suski
    Academic press:
    Optics Express (rok: 2023, tom: 31, strony: 3227), Wydawca: Optica Publishing Group
    Status:
    Published
    DOI:
    10.1364/OE.480074 - link to the publication
  56. Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices
    Authors:
    M. Żak, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, M. Chlipała, A. Lachowski, and C. Skierbiszewski
    Academic press:
    Physical Review Applied (rok: 2021, tom: 15, strony: 24046), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    PhysRevApplied.15.024046 - link to the publication
  57. Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes
    Authors:
    J. Slawinska, G. Muziol, M. Siekacz, H. Turski, M. Hajdel, M. Zak, A. Feduniewicz-Zmuda, G. Staszczak, and C. Skierbiszewski
    Academic press:
    Optics Express (rok: 2022, tom: 30, strony: 27004-27014), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.458950 - link to the publication
  58. Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
    Authors:
    M. Hajdel, M. Chlipała, M. Siekacz, H. Turski, P. Wolny, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, C. Skierbiszewski, and G. Muziol
    Academic press:
    Materials (rok: 2021, tom: 15, strony: 237), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma15010237 - link to the publication
  59. Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction
    Authors:
    K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S. Grzanka, C. Skierbiszewski, and T. Suski
    Academic press:
    Optics Express (rok: 2021, tom: 29, strony: 1824-1837), Wydawca: Optica
    Status:
    Published
    DOI:
    10.1364/OE.415258 - link to the publication