Projects funded by the NCN
Influence of the silicon carbide and the dielectric passivation defect structure on high-temperature electrical properties of epitaxial graphene
2019/33/B/ST3/02677
Keywords:
graphene epitaxy CVD silicon carbide defects high temperatures test structures electrical properties
Descriptors:
- ST3_3: Transport properties of condensed matter
- ST3_4: Electronic properties of materials, surfaces, interfaces, nanostructures, etc.
- ST3_5: Physical properties of semiconductors and insulators
Panel:
ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics
Host institution :
Sieć Badawcza ŁUKASIEWICZ - Instytut Technologii Materiałów Elektronicznych
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: OPUS 17 - announced on 2019-03-15
Amount awarded: 1 305 200 PLN
Project start date (Y-m-d): 2020-02-24
Project end date (Y-m-d): 2023-02-23
Project duration:: 36 months (the same as in the proposal)
Project status: Project settled
Project description
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Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.