Projects funded by the NCN
Investigations of growth technology of InGaAs/AlGaAs/GaAs quantum cascade lasers structures
2015/17/N/ST7/03936
Keywords:
quantum cascade lasers molecular beam epitaxy InGaAs/AlGaAs/GaAs
Descriptors:
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
- ST3_5: Physical properties of semiconductors and insulators
- ST5_4: Thin films
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Instytut Technologii Elektronowej
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: PRELUDIUM 9 - announced on 2015-03-16
Amount awarded: 96 600 PLN
Project start date (Y-m-d): 2016-02-15
Project end date (Y-m-d): 2018-02-14
Project duration:: 24 months (the same as in the proposal)
Project status: Project settled
Project description
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