Projects funded by the NCN
Study of phenomena at the metal-semiconductor interface in semiconductor devices based on AlGaN/GaN heterostructures
2012/07/D/ST7/02583
Keywords:
ohmic contact AlGaN/GaN heterostructures
Descriptors:
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Politechnika Wrocławska, Wydział Elektroniki Mikrosystemów i Fotoniki
woj. dolnośląskie
Principal investigator (from the host institution):
Number of co-investigators in the project: 5
Call: SONATA 4 - announced on 2012-09-15
Amount awarded: 440 374 PLN
Project start date (Y-m-d): 2013-07-17
Project end date (Y-m-d): 2016-11-16
Project duration:: 40 months (the same as in the proposal)
Project status: Project settled