Projects funded by the NCN
Influence of phosphorus on electro-physical properties of dielectric layers obtained by thermal oxidation of 4H-SiC
2012/05/N/ST7/02035
Keywords:
microelectronics silicon carbide thermal oxidation
Descriptors:
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
- ST7_2: Electrical engineering: power components and/or systems
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: PRELUDIUM 3 - announced on 2012-03-15
Amount awarded: 149 998 PLN
Project start date (Y-m-d): 2013-03-25
Project end date (Y-m-d): 2016-03-24
Project duration:: 36 months (the same as in the proposal)
Project status: Project settled