Projects funded by the NCN
Influence of interlayer atomic structure on the electronic properties of the metal/semiconductor junction involving high-pressure phases of silicon and gallium arsenide.
2012/05/B/ST8/02945
Keywords:
Schottky barrier electronic structure interphase boundary silicon gallium arsenide
Descriptors:
- ST8_8: Mechanics of solids
- ST5_1: Structural properties of materials
- ST3_5: Physical properties of semiconductors and insulators
Panel:
ST8 - Production and processes engineering: modelling, product design, process design and control, construction methods and engineering, power units and systems
Host institution :
Uniwersytet Śląski w Katowicach, Wydział Informatyki i Nauki o Materiałach
woj. śląskie
Principal investigator (from the host institution):
Number of co-investigators in the project: 2
Call: OPUS 3 - announced on 2012-03-15
Amount awarded: 148 200 PLN
Project start date (Y-m-d): 2013-03-21
Project end date (Y-m-d): 2015-03-20
Project duration:: 24 months (the same as in the proposal)
Project status: Project settled