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Information on the principal investigator and host institution

Information of the project and the call

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Growth by molecular beam epitaxy, analysis of segregation phenomena and their influence on physical properties of (Al,Ga,In)N layers

2011/03/B/ST5/02698

Keywords:

AlInGaN electron microscopy defects semiconductors

Descriptors:

  • ST5_4: Thin films
  • ST5_19:
  • ST5_9: Biomaterials, biocompatible materials

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Fizyki PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Jolanta Borysiuk 

Number of co-investigators in the project: 8

Call: OPUS 2 - announced on 2011-09-15

Amount awarded: 422 000 PLN

Project start date (Y-m-d): 2012-08-29

Project end date (Y-m-d): 2016-02-28

Project duration:: 42 months (the same as in the proposal)

Project status: Project settled