Projects funded by the NCN


Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Growth by molecular beam epitaxy, analysis of segregation phenomena and their influence on physical properties of (Al,Ga,In)N layers

2011/03/B/ST5/02698

Keywords:

AlInGaN electron microscopy defects semiconductors

Descriptors:

  • ST5_4: Thin films
  • ST5_19:
  • ST5_9: Biomaterials, biocompatible materials

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Fizyki PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Jolanta Borysiuk 

Number of co-investigators in the project: 8

Call: OPUS 2 - announced on 2011-09-15

Amount awarded: 422 000 PLN

Project start date (Y-m-d): 2012-08-29

Project end date (Y-m-d): 2016-02-28

Project duration:: 42 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. licencja MOLP (366 PLN)
  2. polerka do preparatyki TEM (14 000 PLN)
  3. detektor do dyfraktometru rtg z oprogramowaniem (65 000 PLN)
  4. komputer PC z monitorem (5 927 PLN)
  5. oprogramowanie do monochromatora (4 305 PLN)

Information in the final report

  • Publication in academic press/journals (7)
  1. Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy
    Authors:
    J. Borysiuk, K. Sobczak, A. Wierzbicka, E. Jezierska, K. Klosek, M. Sobanska, Z.R. Zytkiewicz, B. Lucznik
    Academic press:
    Journal of Crystal Growth (rok: 2014, tom: 401, strony: 355-358), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2014.01.061 - link to the publication
  2. High pressure and time resolved studies of optical properties of n-type GaN/AlN multi-quantum wells: Experimental and theoretical analysis
    Authors:
    A. Kaminska, D. Jankowski, P. Strak, K. P. Korona, M. Beeler, K. Sakowski, E. Grzanka, J. Borysiuk, K. Sobczak, E. Monroy, and S. Krukowski
    Academic press:
    Journal of Applied Physics (rok: 2016, tom: 120, strony: 095705-1-9), Wydawca: AIP
    Status:
    Published
    DOI:
    10.1063/1.4962282 - link to the publication
  3. Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures
    Authors:
    P. Strak, P. Kempisty, K. Sakowski, A. Kaminska, D. Jankowski, K. P. Korona, K. Sobczak, J. Borysiuk, M. Beeler, E. Grzanka, E. Monroy, S. Krukowski
    Academic press:
    AIP Advances (rok: 2017, tom: 7, strony: 015027-1-26), Wydawca: American Institute of Physics
    Status:
    Published
  4. Correlation of optical and structural properties of GaN/AlN multi-quantum wells-Ab initio and experimental study
    Authors:
    A. Kaminska, P. Strak, J. Borysiuk, K. Sobczak, J.Z. Domagala, M. Beeler, E. Grzanka, K. Sakowski, S. Krukowski, and E. Monroy
    Academic press:
    Journal of Applied Physics (rok: 2016, tom: 119, strony: 015703-1-10), Wydawca: AIP
    Status:
    Published
    DOI:
    10.1063/1.4939595 - link to the publication
  5. Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N
    Authors:
    J. Borysiuk, K. Sakowski, P. Drozdz, K. P. Korona, K. Sobczak, G. Muziol, C. Skierbiszewski, A. Kaminska, and S. Krukowski
    Academic press:
    Journal of Applied Physics (rok: 2016, tom: 120, strony: 015702-1-10), Wydawca: AIP
    Status:
    Published
    DOI:
    10.1063/1.4955077 - link to the publication
  6. High power nitride laser diodes grown by plasma assisted molecular beam epitaxy
    Authors:
    G. Muziol, M. Siekacz, H. Turski, P. Wolny, S. Grzanka, E. Grzanka, A. Feduniewicz-Żmuda, J. Borysiuk, K. Sobczak, J. Domagała, A. Nowakowska-Siwińska, I. Makarowa, P. Perlin, C. Skierbiszewski
    Academic press:
    Journal of Crystal Growth (rok: 2015, tom: 425, strony: 398-400), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jcrysgro.2015.02.067 - link to the publication
  7. Influence of pressure on the properties of GaN/AlN multi-quantum wells - Ab initio study
    Authors:
    Pawel Strak, Konrad Sakowski, Agata Kaminska, Stanislaw Krukowski
    Academic press:
    Journal of Physics and Chemistry of Solids (rok: 2016, tom: 93, strony: 100-117), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jpcs.2016.02.014 - link to the publication