Projects funded by the NCN
Determination of the influence of hydrogen on indium incorporation during growth of gain layers by MOVPE method - ab initio modelling
2011/01/N/ST3/04382
Keywords:
ab initio DFT III-V semiconductors InGaN
Descriptors:
- ST3_7: Spintronics
Panel:
ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics
Host institution :
Instytut Wysokich Ciśnień PAN
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 4
Call: PRELUDIUM 1 - announced on 2011-03-15
Amount awarded: 228 800 PLN
Project start date (Y-m-d): 2011-12-01
Project end date (Y-m-d): 2014-05-31
Project duration:: 30 months (the same as in the proposal)
Project status: Project settled