Projects funded by the NCN
Ultra-shallow plasma ion implantation for technology of advanced MOS/MOSFET structures fabricated on silicon and silicon carbide - characterization of phenomenon, attempts for technological optimization
2011/01/D/ST7/00640
Keywords:
silicon silicon carbide r.f. plasma fluorine/nitrogen implantation high-k dielectrics MOS/MOSFET devices
Descriptors:
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 18
Call: SONATA 1 - announced on 2011-03-15
Amount awarded: 822 400 PLN
Project start date (Y-m-d): 2011-12-07
Project end date (Y-m-d): 2017-06-06
Project duration:: 66 months (the same as in the proposal)
Project status: Project settled