Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

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In-situ studies of plastic relaxation in InGaN buffers serving as substrates for overcoming current incorporation barriers in high In content nitride epitaxial layers

2020/39/I/ST5/03379

Keywords:

InGaN substrates strain relaxation in-situ transmission electron microscopy in-situ x-ray diffraction dislocation kinetics high Indium content InGaN layers

Descriptors:

  • ST5_002:

Panel:

ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution :

Instytut Wysokich Ciśnień PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Julita Wiktoria Smalc-Koziorowska 

Number of co-investigators in the project: 5

Call: OPUS 20 (LAP) - announced on 2020-09-15

Amount awarded: 991 740 PLN

Project start date (Y-m-d): 2021-12-07

Project end date (Y-m-d): 2026-12-06

Project duration:: 60 months (the same as in the proposal)

Project status: Pending project

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (4)
  1. Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures
    Authors:
    J. Moneta, G. Staszczak, E. Grzanka, P. Tauzowski, P. Dłużewski and J. Smalc-Koziorowska
    Academic press:
    Journal of Applied Physics (rok: 2023, tom: 133, strony: 45304), Wydawca: AIP Publishing
    Status:
    Published
    DOI:
    10.1063/5.0128514 - link to the publication
  2. m-Line Frank−Shockley Partial Dislocations in Wurtzite GaN: Atomistic Calculations and High Resolution Electron Microscopy Imaging
    Authors:
    Imad Belabbas, Joanna Moneta, George P. Dimitrakopulos, Joseph Kioseoglou, Jun Chen, Witold Chromiński, and Julita Smalc-Koziorowska
    Academic press:
    ACS Applied Electronic Materials (rok: 2025, tom: 7, strony: 6529−6540), Wydawca: ACS
    Status:
    Published
    DOI:
    10.1021/acsaelm.5c00859 - link to the publication
  3. The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface
    Authors:
    J. Smalc-Koziorowska J. Moneta G. Muzioł W. Chromiński R. Kernke M. Albrecht T. Schulz I. Belabbas
    Academic press:
    Journal of Microscopy (rok: 2023, tom: 293, strony: 146-152), Wydawca: Wiley
    Status:
    Published
    DOI:
    10.1111/jmi.13234 - link to the publication
  4. Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN
    Authors:
    Moneta, J. Kryśko, M. Domagala, J. Z. Grzanka, E. Muziol, G. Siekacz, M. Leszczyński, M. Smalc-Koziorowska, J.
    Academic press:
    Acta Materialia (rok: 2024, tom: 276, strony: 120082), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.actamat.2024.120082 - link to the publication

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