Projects funded by the NCN
In-situ studies of plastic relaxation in InGaN buffers serving as substrates for overcoming current incorporation barriers in high In content nitride epitaxial layers
2020/39/I/ST5/03379
Keywords:
InGaN substrates strain relaxation in-situ transmission electron microscopy in-situ x-ray diffraction dislocation kinetics high Indium content InGaN layers
Descriptors:
- ST5_002:
Panel:
ST5 - Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution :
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
dr hab. Julita Wiktoria Smalc-Koziorowska
Number of co-investigators in the project: 5
Call: OPUS 20 (LAP) - announced on 2020-09-15
Amount awarded: 991 740 PLN
Project start date (Y-m-d): 2021-12-07
Project end date (Y-m-d): 2025-12-06
Project duration:: 48 months (the same as in the proposal)
Project status: Pending project
Project description
Download the project description in a pdf file
Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Information in the final report
- Publication in academic press/journals (2)
- The dissociation of (a+c) misfit dislocations at the InGaN/GaN interfaceAuthors:J. Smalc-Koziorowska J. Moneta G. Muzioł W. Chromiński R. Kernke M. Albrecht T. Schulz I. BelabbasAcademic press:Journal of Microscopy (rok: 2023, tom: 293, strony: 146-152), Wydawca: WileyStatus:PublishedDOI:10.1111/jmi.13234 - link to the publication
- Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaNAuthors:Moneta, J. Kryśko, M. Domagala, J. Z. Grzanka, E. Muziol, G. Siekacz, M. Leszczyński, M. Smalc-Koziorowska, J.Academic press:Acta Materialia (rok: 2024, tom: 276, strony: 120082), Wydawca: ElsevierStatus:PublishedDOI:10.1016/j.actamat.2024.120082 - link to the publication