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Electrothermal average model of a diode-transistor switch with IGBT dedicated to analysis of dc-dc converters

2018/31/N/ST7/01818

Keywords

Descriptors

  • ST7_3: Inżynieria symulacji i modelowania
  • ST7_2: Elektrotechnika, elektronika: półprzewodniki, elementy i układy, systemy

Panel

ST7 – Systems and communication engineering: electronics, communication, optoelectronics

Host institution

Akademia Morska w Gdyni, Wydział Elektryczny

Voivodeship: pomorskie

Other projects carried out by the institution »

Principal investigator (from the host institution)

dr Paweł Krzysztof Górecki

Number of co-investigators in the project: 2

Call

PRELUDIUM 16 – announced on 2018-09-14

Amount awarded
74 200 PLN
Project start date
2019-06-21
Project end date
2021-06-20
Project duration
24 months (the same as in the proposal)
Project status
Project settled

Project description

Download the project description in a pdf file

Note — project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

Publication in academic press/journals (6)

  1. Application of the Averaged Model of the Diode-transistor Switch for Modelling Characteristics of a Boost Converter with an IGBT

    Authors:
    P. Górecki
    Academic press:
    International Journal of Electronics and Telecommunications (year: 2020, volume: 66, pages: 555-560), Publisher: Polska Akademia Nauk, Pl. Defilad 1, 00-901 Warszawa
    Status:
    Published
    DOI:
    10.24425/ijet.2020.134012 – link to the publication

  2. Accurate Computation of IGBT Junction Temperature in PLECS

    Authors:
    P. Górecki, D. Wojciechowski
    Academic press:
    IEEE Transactions on Electron Devices (year: 2020, volume: 67, pages: 2865-2871), Publisher: IEEE-Inst Electrical Electronics Engineers INC, 445 Hoes Lane, Piscataway, NJ 08855-4141 USA
    Status:
    Published
    DOI:
    10.1109/TED.2020.2992233 – link to the publication

  3. Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode

    Authors:
    P. Górecki, K. Górecki
    Academic press:
    Energies (year: 2020, volume: 13, pages: art. number: 3033), Publisher: MDPI, ST Alban-Anlage 66, CH-4052 Basel, Switzerland
    Status:
    Published
    DOI:
    10.3390/en13123033 – link to the publication

  4. Wpływ złożoności biblioteki termicznej tranzystora IGBT w programie PLECS na dokładność wyznaczania temperatury jego wnętrza

    Authors:
    P. Górecki, A. Bielecka, D. Wojciechowski
    Academic press:
    Przegląd Elektrotechniczny (year: 2020, volume: 96, pages: 106-109), Publisher: Wydawnictwo Sigma-NOT Sp z o.o., ul. Ratuszowa 11, 00-950 Warszawa
    Status:
    Published
    DOI:
    10.15199/48.2020.12.20 – link to the publication

  5. Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode-Transistor Switch to Compute the Characteristics of the Boost Converter

    Authors:
    P. Górecki, K. Górecki
    Academic press:
    Energies (year: 2021, volume: 14, pages: art. number: 154), Publisher: MDPI, ST Alban-Anlage 66, CH-4052 Basel, Switzerland
    Status:
    Published
    DOI:
    10.3390/en14010154 – link to the publication

  6. Compact electrothermal model of laboratory made GaN Schottky diodes

    Authors:
    K. Górecki, P. Górecki
    Academic press:
    Microelectronics International (year: 2020, volume: 37, pages: 95-102), Publisher: Emerald Group Publishing LTD, Howard House, Wagon Lane, Bingley BD16 1WA, W Yorkshire, England
    Status:
    Published
    DOI:
    10.1108/MI-11-2019-0068 – link to the publication

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