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Electrothermal average model of a diode-transistor switch with IGBT dedicated to analysis of dc-dc converters

2018/31/N/ST7/01818

Keywords:

IGBT average models dc-dc converters

Descriptors:

  • ST7_3: Simulation engineering and modelling
  • ST7_2: Electrical engineering: power components and/or systems

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Uniwersytet Morski w Gdyni, Wydział Elektryczny

woj. pomorskie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Paweł Górecki 

Number of co-investigators in the project: 2

Call: PRELUDIUM 16 - announced on 2018-09-14

Amount awarded: 74 200 PLN

Project start date (Y-m-d): 2019-06-21

Project end date (Y-m-d): 2021-06-20

Project duration:: 24 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (7)
  1. Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode-Transistor Switch to Compute the Characteristics of the Boost Converter
    Authors:
    P. Górecki, K. Górecki
    Academic press:
    Energies (rok: 2021, tom: 14, strony: art. number: 154), Wydawca: MDPI, ST Alban-Anlage 66, CH-4052 Basel, Switzerland
    Status:
    Published
    DOI:
    10.3390/en14010154 - link to the publication
  2. Compact electrothermal model of laboratory made GaN Schottky diodes
    Authors:
    K. Górecki, P. Górecki
    Academic press:
    Microelectronics International (rok: 2020, tom: 37, strony: 95-102), Wydawca: Emerald Group Publishing LTD, Howard House, Wagon Lane, Bingley BD16 1WA, W Yorkshire, England
    Status:
    Published
    DOI:
    10.1108/MI-11-2019-0068 - link to the publication
  3. Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode
    Authors:
    P. Górecki, K. Górecki
    Academic press:
    Energies (rok: 2020, tom: 13, strony: art. number: 3033), Wydawca: MDPI, ST Alban-Anlage 66, CH-4052 Basel, Switzerland
    Status:
    Published
    DOI:
    10.3390/en13123033 - link to the publication
  4. Application of the Averaged Model of the Diode-transistor Switch for Modelling Characteristics of a Boost Converter with an IGBT
    Authors:
    P. Górecki
    Academic press:
    International Journal of Electronics and Telecommunications (rok: 2020, tom: 66, strony: 555-560), Wydawca: Polska Akademia Nauk, Pl. Defilad 1, 00-901 Warszawa
    Status:
    Published
    DOI:
    10.24425/ijet.2020.134012 - link to the publication
  5. Electrothermal averaged model of a diode-IGBT switch for a fast analysis of DC-DC converters
    Authors:
    P.Górecki
    Academic press:
    IEEE Transactions on Power Electronics (rok: 2021, tom: n.d., strony: n.d.), Wydawca: IEEE-Inst Electrical Electronics Engineers INC, 445 Hoes Lane, Piscataway, NJ 08855-4141 USA
    Status:
    Submitted
    DOI:
    brak - link to the publication
  6. Accurate Computation of IGBT Junction Temperature in PLECS
    Authors:
    P. Górecki, D. Wojciechowski
    Academic press:
    IEEE Transactions on Electron Devices (rok: 2020, tom: 67, strony: 2865-2871), Wydawca: IEEE-Inst Electrical Electronics Engineers INC, 445 Hoes Lane, Piscataway, NJ 08855-4141 USA
    Status:
    Published
    DOI:
    10.1109/TED.2020.2992233 - link to the publication
  7. Wpływ złożoności biblioteki termicznej tranzystora IGBT w programie PLECS na dokładność wyznaczania temperatury jego wnętrza
    Authors:
    P. Górecki, A. Bielecka, D. Wojciechowski
    Academic press:
    Przegląd Elektrotechniczny (rok: 2020, tom: 96, strony: 106-109), Wydawca: Wydawnictwo Sigma-NOT Sp z o.o., ul. Ratuszowa 11, 00-950 Warszawa
    Status:
    Published
    DOI:
    10.15199/48.2020.12.20 - link to the publication

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