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Information of the project and the call

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Electrical conductivity and defect clusters in zinc oxide formed as a result of intentional and unitentional doping

2018/31/B/ST3/03576

Keywords:

zinc oxide Atomic Layer Deposition conductivity carrier concentration doping

Descriptors:

  • ST3_4: Electronic properties of materials, surfaces, interfaces, nanostructures, etc.
  • ST3_5: Physical properties of semiconductors and insulators
  • ST3_7: Spintronics

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Instytut Fizyki Polskiej Akademii Nauk

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Elżbieta Guziewicz 

Number of co-investigators in the project: 7

Call: OPUS 16 - announced on 2018-09-14

Amount awarded: 1 222 200 PLN

Project start date (Y-m-d): 2019-07-11

Project end date (Y-m-d): 2024-01-10

Project duration:: 36 months (the same as in the proposal)

Project status: Project completed

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (10)
  • Book publications / chapters in book publications (1)
  1. Influence of oxygen-rich and zinc-rich conditions on donor and acceptor states and conductivity mechanism of ZnO films grown by ALD-Experimental studies
    Authors:
    E. Przezdziecka, E. Guziewicz, D. Jarosz, D. Snigurenko, Sulich, P. Sybilski, R. Jakiela and W. Paszkowicz
    Academic press:
    Journal of Applied Physics (rok: 2020, tom: 127, strony: 075104 (1-14)), Wydawca: American Insitute of Physics
    Status:
    Published
    DOI:
    10.1063/1.5120355 - link to the publication
  2. Low-Temperature Cathodoluminescence of Nitrogen-Doped ZnO Films Deposited at Low-temperature by Atomic Layer Deposition
    Authors:
    M. Sarwar, B.S. Witkowski, A. Sulich and E. Guziewicz
    Academic press:
    Acta Physica Polonica A (rok: 2022, tom: 141, strony: 135-139), Wydawca: Polish Physical Society
    Status:
    Published
    DOI:
    10.12693/APhysPolA.141.135 - link to the publication
  3. Optical Properties of ZnO Deposited by Atomic Layer Deposition on Sapphire: A Comparison of Thin and Thick Films
    Authors:
    A. Adhikari, E. Przezdziecka, S. Mishra, P. Sybilski, J. Sajkowski, E. Guziewicz
    Academic press:
    Physica Status Solidi A (rok: 2021, tom: N/A, strony: 2000669 (1-9)), Wydawca: Wiley-V C H Verlag GmbHn Weinheim, Germany
    Status:
    Published
    DOI:
    10.1002/pssa.202000669 - link to the publication
  4. Cathodoluminescent Imaging of ZnO:N Films: Study of Annealing Processes Leading to Enhanced Acceptor Luminescence
    Authors:
    S. Mishra, B.S. Witkowski, R. Jakiela, Z. Khosravizadeh, W. Paszkowicz, A. Sulich, O. Volnianska, W. Woźniak and E. Guziewicz
    Academic press:
    Physica Status Solidi A (rok: 2022, tom: 2200466, strony: 45302), Wydawca: Willey-VCH GmbH
    Status:
    Published
    DOI:
    10.1002/pssa.202200466 - link to the publication
  5. Effect of strain and surface proximity on the acceptor grouping in ZnO
    Authors:
    O. Volnianska, V. Ivanov, L. Wachnicki, E. Guziewicz
    Academic press:
    ACS Omega (rok: 2023, tom: 8(45), strony: 43099-43108), Wydawca: American Chemical Society
    Status:
    Published
    DOI:
    10.1021/acsomega.3c06556 - link to the publication
  6. Electrical and structural properties of semipolar-ZnO/a-Al2O3 and polar-ZnO/c-Al2O3 films: A comparative study
    Authors:
    S. Mishra, W. Paszkowicz, A. Sulich, R. Jakiela, M. Ozga and E. Guziewicz
    Academic press:
    Materials (rok: 2023, tom: 16, 151, strony: 45304), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/ma16010151 - link to the publication
  7. Structural Properties of Thin ZnO Films Deposited by ALD under O-rich and Zn-rich Growth Conditions and Their Relationship with Electrical Parameters
    Authors:
    3.S. Mishra, E. Przezdziecka, W. Wozniak, A. Adhikari, R. Jakiela, W. Paszkowicz, A. Sulich, K. Kopalko and E. Guziewicz
    Academic press:
    Materials (rok: 2021, tom: 14, strony: 4048 (1-21)), Wydawca: MDPI, Basel, Switzerland
    Status:
    Published
    DOI:
    10.3390/ma14144048 - link to the publication
  8. Valence Band Electronic Structure of ZnO and ZnO:N – Experimental and Theoretical Evidence of Defect Complexes
    Authors:
    E. Guziewicz, O. Volnianska, I. N. Demchenko, P. Zeller, M. Amati, L. Gregoratti
    Academic press:
    Physical Review Applied (rok: 2022, tom: 18, strony: 44021), Wydawca: American Physical Society
    Status:
    Published
    DOI:
    10.1103/PhysRevApplied.18.044021 - link to the publication
  9. Hydrogen in as grown and annealed ZnO films grown by Atomic Layer Deposition
    Authors:
    E. Guziewicz, W. Wozniak, S. Mishra, R. Jakiela, M. Guziewicz, V. Yu. Ivanov, E. Lusakowska, R. Schifano
    Academic press:
    Physica Status Solidi A (rok: 2021, tom: 218, strony: 2000318 (1-5)), Wydawca: WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY
    Status:
    Published
    DOI:
    10.1002/pssa.202000318 - link to the publication
  10. Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n-Type to p-Type Material
    Authors:
    E. Guziewicz, T. A. Krajewski, E. Przezdziecka, K. P. Korona, N. Czechowski, L. Klopotowski, and P. Terziyska
    Academic press:
    Physica Status Solidi B (rok: 2019, tom: 257, strony: 1900472 (1-12)), Wydawca: WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY
    Status:
    Published
    DOI:
    10.1002/pssb.201900472 - link to the publication
  1. Zinc Oxide Grown by Atomic Layer Deposition: A Versatile Material for Microelectronics
    Authors:
    Elżbieta Guziewicz
    Book:
    Oxide-based Materials and Structures: Fundamentals and Applications (rok: 2020, tom: 1, strony: 201-228), Wydawca: Taylor & Francis Group, LLC Corp.
    Status:
    Published

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