Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Medium voltage power conversion with Silicon Carbide power devices

2017/27/B/ST7/00970

Keywords:

power electronics power converters power transistors silicon carbide medium voltage

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST7_3: Simulation engineering and modelling
  • ST7_1: Control engineering in automation and robotics

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Politechnika Warszawska, Wydział Elektryczny

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Jacek Rąbkowski 

Number of co-investigators in the project: 7

Call: OPUS 14 - announced on 2017-09-15

Amount awarded: 947 000 PLN

Project start date (Y-m-d): 2018-06-29

Project end date (Y-m-d): 2021-12-28

Project duration:: 42 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Cewka Rogowskiego (10 000 PLN)
  2. Sonda wysokonapięciowa (23 000 PLN)
  3. Zasilacz wysokonapięciowy 2kV/10kW (39 000 PLN)

Information in the final report

  • Publication in academic press/journals (6)
  • Articles in post-conference publications (5)
  1. A Simple Method to Validate Power Loss in Medium Voltage SiC MOSFETs and Schottky Diodes Operating in a Three-Phase Inverter
    Authors:
    Jacek Rąbkowski, Hubert Skoneczny, Rafał Kopacz, Przemysław Trochimiuk, Grzegorz Wrona
    Academic press:
    Energies (rok: 2020, tom: 13, strony: 45309), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/en13184773 - link to the publication
  2. Medium Voltage Flying Capacitor DC–DC Converter With High-Frequency TCM-Q2L Control
    Authors:
    R. Kopacz, M. Harasimczuk, P. Trochimiuk, G. Wrona, J. Rąbkowski
    Academic press:
    IEEE Transactions on Power Electronics (rok: 2022, tom: vol. 37, no. 4, strony: 4233-4248), Wydawca: IEEE
    Status:
    Published
    DOI:
    10.1109/TPEL.2021.3122329. - link to the publication
  3. Medium Voltage Power Switch in Silicon Carbide – a Comparative Study
    Authors:
    P. Trochimiuk, R. Kopcz, K. Frąc, J. Rąbkowski
    Academic press:
    IEEE Access (rok: 2022, tom: 10, strony: 26849-26858), Wydawca: IEEE
    Status:
    Published
    DOI:
    10.1109/ACCESS.2022.3156277 - link to the publication
  4. Active Voltage Balancing of Series-Connected 1.7 kV/325 A SiC MOSFETs Enabling Continuous Operation at Medium Voltage
    Authors:
    Przemysław Trochimiuk, Rafał Kopacz, Grzegorz Wrona, Jacek Rąbkowski
    Academic press:
    IEEE Access (rok: 2021, tom: 9, strony: 8604 - 8614), Wydawca: IEEE
    Status:
    Published
    DOI:
    10.1109/ACCESS.2021.3049606 - link to the publication
  5. Aktywna metoda kontroli rozkładu napięć na szeregowo połączonych tranzystorach SiC MOSFET w łączniku 3,3 kV
    Authors:
    Przemysław Trochimiuk
    Academic press:
    Przegląd Elektrotechniczny (rok: 2020, tom: 7, strony: 80-85), Wydawca: Wydawnictwo SIGMA_NOT
    Status:
    Published
    DOI:
    10.15199/48.2020.07.15 - link to the publication
  6. Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
    Authors:
    Bartosz Lasek, Przemysław Trochimiuk, Rafał Kopacz, Jacek Rąbkowski
    Academic press:
    Applied Sciences (rok: 2021, tom: 11, strony: 45307), Wydawca: MDPI
    Status:
    Published
    DOI:
    10.3390/app11052210 - link to the publication
  1. 3.3 kV/ 450 a SiC MOSFET Module - Modelling and Experiments
    Authors:
    J. Rabkowski, R. Sobieski, M. Zdanowski, S. Piasecki
    Conference:
    20th European Conference on Power Electronics and Applications (rok: 2018, ), Wydawca: EPE
    Data:
    konferencja 17-21 IX
    Status:
    Published
  2. Aktywna metoda kontroli rozkładu napięć na szeregowo połączonych tranzystorach SiC MOSFET w łączniku 3,3 kV
    Authors:
    P. Trochimiuk (wyróżnienie)
    Conference:
    Krajowa Konferencja Sterowanie w Energoelektronice i Napędzie Elektrycznym SENE (rok: 2019, ), Wydawca: SENE
    Data:
    konferencja 20-22 XI
    Status:
    Published
  3. Medium voltage power switch based on 1.7kV SiC MOSFETs connected in series inside power modules
    Authors:
    P. Trochimiuk, R. Kopacz, J. Rabkowski, G. Wrona
    Conference:
    21st European Conference on Power Electronics and Applications (EPE'19 ECCE Europe) (rok: 2019, ), Wydawca: EPE
    Data:
    konferencja 2-6 IX
    Status:
    Published
  4. High-Frequency SiC-Based Medium Voltage Quasi-2-Level Flying Capacitor DC/DC Converter With Zero Voltage Switching
    Authors:
    Rafał Kopacz, Przemysław Trochimiuk, Grzegorz Wrona, Jacek Rąbkowski
    Conference:
    22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) (rok: 2020, ), Wydawca: European Power Electronics Association
    Data:
    konferencja 44081
    Status:
    Published
  5. Impact of a gate drive on performance of three-phase inverters based on 3.3 kV SiC MOSFETs
    Authors:
    Radosław Sobieski, Przemysław Trochimiuk, Hubert Skoneczny, Jacek Rąbkowski
    Conference:
    Progress in Applied Electrical Engineering (PAEE) (rok: 2020, ), Wydawca: IEEE
    Data:
    konferencja 44003
    Status:
    Published

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