Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Examination of radiation damage in semiconductors using electrons of ultra-lw energy

2017/27/B/ST8/01158

Keywords:

semiconducors radiation defects low-kV scanning electron microscopy

Descriptors:

  • ST8_8: Mechanics of solids
  • ST8_14: Other related subjects

Panel:

ST8 - Production and processes engineering: modelling, product design, process design and control, construction methods and engineering, power units and systems

Host institution :

Sieć Badawcza ŁUKASIEWICZ - Instytut Mikroelektroniki i Fotoniki

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Iwona Jóźwik 

Number of co-investigators in the project: 5

Call: OPUS 14 - announced on 2017-09-15

Amount awarded: 507 200 PLN

Project start date (Y-m-d): 2018-07-19

Project end date (Y-m-d): 2022-07-18

Project duration:: 48 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Komputer (laptop) i monitor komputerowy wraz z oprogramowaniem Windows i MS Office (6 000 PLN)

Information in the final report

  • Publication in academic press/journals (5)
  1. Ion-Irradiated Damage in Semiconductors Visualized by Means of Low-kV Scanning Electron Microscopy
    Authors:
    Iwona Jozwik, Adam Barcz, Ewa Dumiszewska, Elzbieta Dabrowska
    Academic press:
    Microscopy and Microanalysis (rok: 2019, tom: 25 (suppl 2), strony: 486-487), Wydawca: Cambridge University Press
    Status:
    Published
    DOI:
    10.1017/S1431927619003167 - link to the publication
  2. Damage-induced voltage alteration (DIVA) contrast in SEM images of ionirradiated semiconductors
    Authors:
    Iwona Jóźwik, Adam Barcz, Elżbieta Dąbrowska, Ewa Dumiszewska, Paweł Piotr Michałowski
    Academic press:
    Ultramicroscopy (rok: 2019, tom: 204, strony: 45452), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.ultramic.2019.04.013 - link to the publication
  3. Resistivity contrast imaging in semiconductor structures using ultra-low energy scanning electron microscopy
    Authors:
    I. Jóźwik, J. Jagielski, E. Dumiszewska, M. Kamiński, U. Kentsch
    Academic press:
    Ultramicroscopy (rok: 2021, tom: 228, strony: 113333 (1-6)), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.ultramic.2021.113333 - link to the publication
  4. Direct visualization of highly resistive areas in GaN by means of low-voltage scanning electron microscopy
    Authors:
    Iwona Jóźwik, Jacek Jagielski, Piotr Caban, Maciej Kamiński, Ulrich Kentsch
    Academic press:
    Materials Science in Semiconductor Processing (rok: 2022, tom: 138, strony: 106293 (1-4)), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mssp.2021.106293 - link to the publication
  5. Depth-distribution of resistivity within ion-irradiated semiconductor layers revealed by low-kV scanning electron microscopy
    Authors:
    I. Jóźwik, J.Jagielski, P. Ciepielewski, E. Dumiszewska, K. Piętak, M. Kamiński, U. Kentsch
    Academic press:
    Ultramicroscopy (rok: 2021, tom: b.d., strony: b.d.), Wydawca: Elsevier
    Status:
    Submitted
    DOI:
    brak - link to the publication

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