Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Investigation of transport and fluctuation phenomena in HgCdTe heterostructures by usin advanced numerical analysis conected with experimental characterization of photoelectric devices manufactured with MOCVD and MBE technology

2016/23/B/ST7/03958

Keywords:

Numerical modeling thermodynamic of irreversible processes in semiconductors infrared detectors transport phenomena current noise MOCVD and MBE technology,

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST7_3: Simulation engineering and modelling

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego, Wydział Nowych Technologii i Chemii

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Krzysztof Jóźwikowski 

Number of co-investigators in the project: 3

Call: OPUS 12 - announced on 2016-09-15

Amount awarded: 314 600 PLN

Project start date (Y-m-d): 2017-07-10

Project end date (Y-m-d): 2020-07-09

Project duration:: 36 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Equipment purchased [PL]

  1. Origin PRO 2018.

Information in the final report

  • Publication in academic press/journals (7)
  • Articles in post-conference publications (5)
  1. Photon recycling effect in small pixel p-i-n HgCdTe long wavelength infrared photodiodes
    Authors:
    Kopytko, M., Jóźwikowski, K., Martyniuk, P., Rogalski, A.
    Academic press:
    Infrared Physics and Technology (rok: 2019, tom: 97, strony: 38-42), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.infrared.2018.12.015 - link to the publication
  2. Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg1−xCdxTe Structures
    Authors:
    A. Jóźwikowska, K. Jóźwikowski, J. Antoszewski, L. Faraone i M. Suligowski
    Academic press:
    IEEE TRANSACTIONS ON ELECTRON DEVICES, (rok: 2018, tom: VOL. 65, NO. 11, strony: 4995-5001), Wydawca: IEEE
    Status:
    Published
    DOI:
    10.1109/TED.2018.2871270 - link to the publication
  3. Enhanced numerical modeling of HgCdTe LWIR HOT non-equilibrium P+ν(π)N+ photodiodes
    Authors:
    Krzysztof Jóźwikowski, Alina jóźwikowska
    Academic press:
    Journal of Electronics Materials (rok: 2019, tom: 48 (10), strony: 6030-6039), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11664-019-07264-w - link to the publication
  4. Estimation of influence of lattice strain, bending and doping on the width of energy gap in InAsSb heterostructures
    Authors:
    Alina Jóźwikowska, Krzysztof Jóźwikowski, Robert Ciupa, Mariusz Suligowski
    Academic press:
    Infrared Physics and Technology (rok: 2019, tom: 99, strony: 292-303), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.infrared.2019.04.020 - link to the publication
  5. Numerical estimation of lattice strain, bending and generation of misfit dislocations in CdHgTe heterostructures grown on GaAs substrate
    Authors:
    Alina Jóźwikowska· Olga Markowska2· Krzysztof Jóźwikowski
    Academic press:
    Optical and Quantum electronics (rok: 2020, tom: 52, strony: 254, 1-14), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-020-02391-9 - link to the publication
  6. Numerical estimation of photon reabsorption process and optical crosstalk in arrays of HgCdTe photodiodes
    Authors:
    Alina Jóźwikowska, Krzysztof jóźwikowski
    Academic press:
    Optical and Quantum Electronics (2019) (rok: 2019, tom: 51:85, strony: 45305), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-019-1781-4 - link to the publication
  7. Enhanced numerical design of two‑barrier infrared detectors with III–V compounds heterostructures considering the infuence of lattice strain and misft dislocations on the band gap
    Authors:
    A. Jóźwikowska M. Suligowski i K. Jóźwikowski
    Academic press:
    Optical and quantum Electronics (rok: 2019, tom: 51 (7), strony: no. 247 1-15), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-019-1960-3 - link to the publication
  1. Influence of radiative recombination on performance of p-i-n HOT long wavelength infrared HgCdTe photodiodes
    Authors:
    A. Rogalski, M. Kopytko, K. Jóźwikowski, P. Martyniuk
    Conference:
    SPIE (rok: 2018, ), Wydawca: PROCEEDINGS OF SPIE
    Data:
    konferencja 2018 03 20
    Status:
    Published
  2. Numerical estimation of lattice strain, bending and generation of misfit dislocations in HgCdTe heterostructures grown on GaAs substrate
    Authors:
    Alina Jóźwikowska· Olga Markowska2· Krzysztof Jóźwikowski
    Conference:
    NUSOD 2019 (rok: 2019, ), Wydawca: IEEE
    Data:
    konferencja 08-12 07
    Status:
    Published
  3. Enhanced numerical design of two barrier infrared detectors with III-V compounds heterostructures
    Authors:
    A. Jóźwikowska, M. Suligowski(, K. Jóźwikowski
    Conference:
    NUSOD 2018 (rok: 2018, ), Wydawca: IEEE
    Data:
    konferencja 5-9 11
    Status:
    Published
  4. Numerical estimation of photon reabsorption process and optical crosstalk in arrays of HgCdTe photodiodes
    Authors:
    Alina Jóźwikowska· · Krzysztof Jóźwikowski
    Conference:
    NUSOD 2018 (rok: 2018, ), Wydawca: IEEE
    Data:
    konferencja 05-09 11
    Status:
    Published
  5. Enhanced numerical design of HgCdTe MWIR HOT P+νN+ photodiodes
    Authors:
    A. Jóźwikowska, R. Ciupa, O. Markowska and K. Jóźwikowski
    Conference:
    NUSOD 2019 (rok: 2019, ), Wydawca: IEEE
    Data:
    konferencja 08-12 o7 2019
    Status:
    Published

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