Experimental validation of formula for calculation thermal diffusivity in superlattices performed using a combination of two frequency-domain methods: photothermal infrared radiometry and thermoreflectance
Authors:
M. Pawlak, T. Kruck, N. Spitzer, D. Dziczek, A.Ludwig, A.Wieck
Academic press:
Appl. Sci.-Basel (rok: 2021, tom: 11, strony: 6125-6140), Wydawca: MDPI
Simple method for the determination of the effective infrared absorption coefficient of semiconductor wafer using modulated photothermal infrared radiometry
Academic press:
Infrared Physics and Technology (rok: 2019, tom: 97, strony: 43-47), Wydawca: Elsevier
Simultaneous measurement of infrared absorption coefficient of Carbon doped Al0.33Ga0.67As thin film and thermal boundary resistance between thin film and heavily Zn doped GaAs using spectrally-resolved modulated photothermal infrared radiometry
Authors:
M. Pawlak, N. Horny, S.Scholz, C.Ebler, A.Ludwig, A.D.Wieck
Academic press:
Thermochimica Acta (rok: 2018, tom: 667, strony: 73-78), Wydawca: Elsevier
Measurement of thermal transport properties of selected superlattice and thin films using frequency-domain photothermal infrared radiometry
Authors:
M. Pawlak, N. Jukam, T.Kruck, D. Dziczek, A.Ludwig, A.D.Wieck
Academic press:
Measurement (rok: 2020, tom: 166, strony: 108226 - 8 stron), Wydawca: Elsevier
On radiative lifetime measurement of chromium transitions in Cr doped ZnSe and ZnTe crystals using the frequency domain modulated infrared radiometry
Academic press:
Infrared Physics and Technology (rok: 2018, tom: 92, strony: 90-95), Wydawca: Elsevier
Simultaneous measurement of thermal conductivity and diffusivity of an undoped Al0.33Ga0.67As thin film epitaxially grown on a heavily Zn doped GaAs using spectrally-resolved modulated photothermal infrared radiometry
Authors:
M. Pawlak, S.Pal, S.Scholz, A.Ludwig, A.D.Wieck
Academic press:
Thermochimica Acta (rok: 2018, tom: 662, strony: 69-74), Wydawca: Elsevier
Simultaneously mapping of in-depth thermal diffusivity and effective infrared absorption coefficient of Si-doped GaAs wafer using lock-in thermography
Authors:
M. Pawlak, K.Ramza, M.Streza
Academic press:
Analitycal Letters (rok: 2019, tom: 52, strony: 93-101), Wydawca: Taylor and Francis
On the infrared absorption coefficient measurement of thick heavily Zn doped GaAs using spectrally resolved modulated photothermal infrared radiometry
Authors:
M. Pawlak, S.Pal, A.Ludwig, A.D.Wieck
Academic press:
Journal of Applied Physics (rok: 2017, tom: 122, strony: 135109), Wydawca: AIP
Quantitative thermal wave phase imaging of an IR semi-transparent GaAs wafer using IR lock-in thermography
Authors:
M. Pawlak, M.Streza, C.Morari, K.Strzałkowski, M. Depriester, M. Chirtoc
Academic press:
Measurement Science and Technology (rok: 2017, tom: 28, strony: 25008), Wydawca: IOP
Comments on the paper: M. Pawlak, K. Strzałkowski, Identification of the photoluminescence response in the frequency domain modulated infrared radiometry signal of ZnTe:Cr bulk crystal, Infrared Phys. Technol. 78 (2016) 190–194
Academic press:
Infrared Physics & Technology (rok: 2017, tom: 85, strony: 502-503), Wydawca: Elsevier
On measurement of the thermal diffusivity of moderate and heavily doped semiconductor samples using modulated photothermal infrared radiometry
Authors:
M. Pawlak, A.Panas, A.Ludwig, A.D.Wieck
Academic press:
Thermochimica Acta (rok: 2017, tom: 650, strony: 33-38), Wydawca: Elsevier
Photothermal, photocarrier, and photoluminescence phenomena in semiconductors studied using spectrally resolved modulated infrared radiometry: physics and applications
Academic press:
Journal of Applied Physics (rok: 2019, tom: 126, strony: 150902), Wydawca: AIP
Quantitative Imaging of Defect Distributions in CdZnTe Wafers Using Combined Deep-Level Photothermal Spectroscopy, Photocarrier Radiometry, and Lock-In Carrierography
Authors:
A. Mielnikov, A.Mandelis, A.Soral, C. Zavalo-Lugo, M. Pawlak
Academic press:
ACS APPLIED ELECTRONIC MATERIALS (rok: 2021, tom: 3, strony: 2551-2563), Wydawca: ACS