Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Optical investigations of the energy level structure and carrier's dynamisc in type II semiconductor low dimensional structures predicted to active regions in emitters and detectors of radiation in the range 3-10 micrometers

2014/15/B/ST7/04663

Keywords:

MID infrared quantum wells superlattices energy levels configuration carriers live time charge dynamics

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Politechnika Wrocławska

woj. dolnośląskie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Marcin Motyka 

Number of co-investigators in the project: 7

Call: OPUS 8 - announced on 2014-09-15

Amount awarded: 1 383 488 PLN

Project start date (Y-m-d): 2015-09-22

Project end date (Y-m-d): 2019-03-21

Project duration:: 42 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Chłodziarka (200 000 PLN)
  2. Miernik mocy wiązki laserowej.
  3. Nadprzewodzący deyektor MIR z systemem sterującym (240 000 PLN)
  4. Nadprzewodzący detektor NIR z systemem sterującym (240 000 PLN)
  5. siatka dyfrakcyjna (20 000 PLN)
  6. Laser impulsowy.

Information in the final report

  • Publication in academic press/journals (10)
  1. Features of carrier confinement in InAsSb(P) alloys and quantum wells for roomtemperature operating mid-infrared emitters
    Authors:
    M. Kurka, M. Dyksik, W. Golletz, M. Środa, V.V. Romanov, K.D. Moiseev, M. Motyka
    Academic press:
    Applied Physics Express (rok: 2019, tom: 12, strony: 115504), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.7567/1882-0786/ab4981 - link to the publication
  2. GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes
    Authors:
    M. Kurka, M. Dyksik, S. Suomalainen, E. Koivusalo, M. Guina, M. Motyka
    Academic press:
    Optical Materials (rok: 2019, tom: 91, strony: 274–278), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.optmat.2019.03.036 - link to the publication
  3. M-shaped quantum wells for active region of interband cascade laser
    Authors:
    K. Ryczko and G. Sęk
    Academic press:
    Optical Materials (rok: 2018, tom: 88, strony: 252–255), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.optmat.2018.11.014 - link to the publication
  4. Towards unstrained interband cascade lasers
    Authors:
    Krzysztof Ryczko, Grzegorz Sęk
    Academic press:
    Applied Physics Express (rok: 2018, tom: 11, strony: 12703), Wydawca: Jappaness Society of Applied Physics
    Status:
    Published
    DOI:
    10.7567/APEX.11.012703 - link to the publication
  5. Absorption and dispersion in undoped epitaxial GaSb layer
    Authors:
    M. Wasiak, M. Motyka, T. Smołka, J. Ratajczak, A. Jasik
    Academic press:
    Materials Research Express (rok: 2018, tom: 5, strony: 25907), Wydawca: IOP
    Status:
    Published
    DOI:
    10.1088/2053-1591/aaae86 - link to the publication
  6. Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures
    Authors:
    M. Dyksik, M. Motyka, G. Sęk, J. Misiewicz, M. Dallner, S. Höfling, and M. Kamp
    Academic press:
    Journal of Applied Physics (rok: 2016, tom: 120, strony: 45297), Wydawca: AIP
    Status:
    Published
    DOI:
    10.1063/1.4958904 - link to the publication
  7. Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
    Authors:
    M. Syperek, K. Ryczko, M. Dallner, M. Dyksik, M. Motyka, M. Kamp, S. Höfling, J. Misiewicz and G. Sęk
    Academic press:
    Acta Physica Polonica (rok: 2016, tom: 130, strony: 1224-1228), Wydawca: IFPAN
    Status:
    Published
    DOI:
    10.12693/APhysPolA.130.1224 - link to the publication
  8. Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells
    Authors:
    M. Dyksik, M. Motyka, R. Weih, S. Hofling, M. Kamp, G. Sęk, J. Misiewicz
    Academic press:
    Optical and Quantum Electronics (rok: 2017, tom: 49, strony: 45299), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-017-0891-0 - link to the publication
  9. Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates
    Authors:
    M. Dyksik, M. Motyka, M. Kurka, K. Ryczko, M. Dallner, S. Hofling, M. Kamp, G. Sęk, J. Misiewicz
    Academic press:
    Optical and Quantum Electronics (rok: 2016, tom: 48, strony: 45299), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-016-0667-y - link to the publication
  10. Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers
    Authors:
    M. Dyksik, M. Motyka, M. Kurka, K. Ryczko, J. Misiewicz, A. Schade, M. Kamp, S. Höfling, and G. Sęk,
    Academic press:
    Japanese Journal of Applied Physics (rok: 2017, tom: 56, strony: 110301), Wydawca: The Japan Society of Applied Physics
    Status:
    Published
    DOI:
    10.7567/JJAP.56.110301 - link to the publication

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