Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Band structure, optical gain and other parameters of novel semiconductor lasers

2013/10/E/ST3/00520

Keywords:

semiconductors quantum wells band structure optical gain

Descriptors:

  • ST3_7: Spintronics

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Politechnika Wrocławska

woj. dolnośląskie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Marta Gładysiewicz-Kudrawiec 

Number of co-investigators in the project: 5

Call: SONATA BIS 3 - announced on 2013-06-14

Amount awarded: 1 455 700 PLN

Project start date (Y-m-d): 2014-07-14

Project end date (Y-m-d): 2020-07-13

Project duration:: 72 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Laser impulsowy (95 000 PLN)
  2. Monochromator z detektorem CCD (160 000 PLN)
  3. Chłodziarka helowa (100 000 PLN)
  4. Laser pracy ciągłej (140 000 PLN)

Information in the final report

  • Publication in academic press/journals (12)
  1. Emission and material gain spectra of polar compressive strained AlGaN quantum wells grown on virtual AlGaN substrates: Tuning emission wavelength and mixing TE and TM mode of light polarization
    Authors:
    M. Gladysiewicz, M. Rudzinski, D. Hommel, R. Kudrawiec
    Academic press:
    Semicond. Sci. Technol (rok: 2018, tom: 33, strony: 075003 (20pp)), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.1088/1361-6641/aac2a3 - link to the publication
  2. Material Gain in Ga0.66In0.34NyAs1−y, GaNyAs0.69−ySb0.31, and GaNyP0.46Sb0.54−y Quantum Wells Grown on GaAs Substrates: Comparative Theoretical Studies
    Authors:
    M. Gladysiewicz, R. Kudrawiec, M. S. Wartak,
    Academic press:
    IEEE Journal of Quantum Electronics (rok: 2014, tom: 50, strony: 996-1005), Wydawca: IEEE Photonics Society
    Status:
    Published
    DOI:
    10.1109/JQE.2014.2363763 - link to the publication
  3. Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys
    Authors:
    W M Linhart, M Gladysiewicz, J Kopaczek, M K Rajpalke, M J Ashwin, T D Veal and R Kudrawiec
    Academic press:
    Journal of Physics D: Applied Physics (rok: 2017, tom: 50, strony: 375102 (6pp)), Wydawca: IOP Publishing (United Kingdom)
    Status:
    Published
    DOI:
    10.1088/1361-6463/aa7e64 - link to the publication
  4. Optical gain sensitivity of BGaAs/GaP quantum wells to admixtures of group III and V atoms
    Authors:
    H. S. Maczko, R. Kudrawiec and M. Gladysiewicz
    Academic press:
    Optical Materials Express (rok: 2020, tom: 10, strony: 2962-2972), Wydawca: OSA Publishing
    Status:
    Published
    DOI:
    10.1364/OME.40507 - link to the publication
  5. Optical Gain Characteristics of BGaAs/GaP Quantum Wells
    Authors:
    Herbert Maczko, Robert Kudrawiec, Marta Gładysiewicz
    Academic press:
    Photonics Journal (rok: 2020, tom: 12, No. 4, strony: 6101013), Wydawca: IEE photonics Society
    Status:
    Published
    DOI:
    10.1109/JPHOT.2020.3006624 - link to the publication
  6. Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells
    Authors:
    H. S. Mączko, R. Kudrawiec, and M. Gladysiewicz
    Academic press:
    Scentific Reports (rok: 2019, tom: 9, strony: 3316), Wydawca: Nature Publishing Group
    Status:
    Published
    DOI:
    10.1038/s41598-019-40146-z - link to the publication
  7. Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate
    Authors:
    M. Gladysiewicz, R. Kudrawiec, M. S. Wartak
    Academic press:
    IEEE Journal of Quantum Electronics (rok: 2015, tom: 51, strony: 7100212-7100212), Wydawca: IEEE Photonics Society
    Status:
    Published
    DOI:
    10.1109/JQE.2015.2410340 - link to the publication
  8. Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range
    Authors:
    M. Gladysiewicz, R. Kudrawiec, and M. S. Wartak
    Academic press:
    Journal of Applied Physics (rok: 2016, tom: 118, strony: 75701), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4941939 - link to the publication
  9. Material gain engineering in staggered polar AlGaN/AlN quantum wells dedicated for deep UV lasers
    Authors:
    M. Gladysiewicz, D. Hommel, R. Kudrawiec
    Academic press:
    IEE Journal of Quantum Electrinics (rok: 2019, tom: 25, NO. 6,, strony: 1901108), Wydawca: IEEE Photonics Society
    Status:
    Published
    DOI:
    10.1109/JSTQE.2019.2950802 - link to the publication
  10. Structural and optical properties of GaSbBi/GaSb quantum wells
    Authors:
    L. Yue, X. Chen, Y. Zhang, J. Kopaczek, J. Shao, M. Gladysiewicz, R. Kudrawiec X. Ou, S. Wang
    Academic press:
    Optical Material Express (rok: 2018, tom: 8, strony: 893-900), Wydawca: OSA Publishing
    Status:
    Published
    DOI:
    10.1364/OME.8.000893 - link to the publication
  11. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates
    Authors:
    M. Gladysiewicz, R. Kudrawiec, and M. S. Wartak
    Academic press:
    Journal of Applied Physics (rok: 2015, tom: 118, strony: 55702), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4927922 - link to the publication
  12. Electronic band structure of semiconductor alloys: from abinitio to k⋅p via computational alchemy, on example of Ge1−xSnx alloy
    Authors:
    P. Scharoch, N. Janik, M. Wiśniewski, H.S. Mączko, M. Gładysiewicz, M.P. Polak and .R. Kudrawiec
    Academic press:
    Computational Materials Science (rok: 2021, tom: 187, strony: 110052), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.commatsci.2020.110052 - link to the publication

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