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Information of the project and the call

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Investigation of fundamental physical properties of coupled quantum well - quantum dot systems emitting in the near infrared range of 1.3 - 1.55 micrometer

2013/10/M/ST3/00636

Keywords:

quantum well quantum dot coupling charge transfer spin stransfer

Descriptors:

  • ST3_7: Spintronics
  • ST3_5: Physical properties of semiconductors and insulators

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

woj. dolnośląskie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr hab. Grzegorz Sęk 

Number of co-investigators in the project: 15

Call: HARMONIA 5 - announced on 2013-06-14

Amount awarded: 1 150 500 PLN

Project start date (Y-m-d): 2014-06-09

Project end date (Y-m-d): 2018-01-08

Project duration:: 43 months (the same as in the proposal)

Project status: Project settled

Information in the final report

  • Publication in academic press/journals (8)
  • Articles in post-conference publications (1)
  1. Electronic Structure Calculations of InP-Based Coupled Quantum Dot–Quantum Well Structures
    Authors:
    J. Andrzejewski
    Academic press:
    Acta Physica Polonica A (rok: 2016, tom: 129, strony: A97-A99), Wydawca: Instytut Fizyki, Polskiej Akademii Nauk
    Status:
    Published
    DOI:
    10.12693/APhysPolA.129.A-97 - link to the publication
  2. Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot - quantum well system
    Authors:
    M. Pieczarka, M. Syperek, D. Biegańska, C. Gilfert, E.M. Pavelescu, J. P. Reithmaier, J. Misiewicz, G. Sęk
    Academic press:
    Applied Physics Letters (rok: 2017, tom: 110, strony: 221104-1-5), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4984747 - link to the publication
  3. Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dotsquantum well structure emitting at 1.55 μm
    Authors:
    M. Syperek, J. Andrzejewski, E. Rogowicz, J. Misiewicz, S. Bauer, V. I. Sichkovskyi, J.P. Reithmeier, G. Sęk
    Academic press:
    Applied Physics Letters (rok: 2018, tom: 112, strony: 221901-1-5), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.5027596 - link to the publication
  4. Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
    Authors:
    W. Rudno-Rudziński, M. Syperek, J. Andrzejewski, A. Maryński, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk
    Academic press:
    AIP Advances (rok: 2017, tom: 7, strony: 015117-1-8), Wydawca: America Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4975634 - link to the publication
  5. Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers
    Authors:
    W. Rudno-Rudziński, M. Syperek, A. Maryński, J. Andrzejewski, J. Misiewicz, S. Bauer, V. I. Sichkovskyi, J. P. Reithmaier, M. Schowalter, B. Gerken, A. Rosenauer, G. Sęk
    Academic press:
    Physica Status Solidi A (rok: 2018, tom: 215, strony: 1700455-1-6), Wydawca: John Wiley and Sons
    Status:
    Published
    DOI:
    10.1002/pssa.201700455 - link to the publication
  6. Struktury tunelowe studnia kwantowa-kropki kwantowe jako ośrodek czynny laserów telekomunikacyjnych
    Authors:
    W. Rudno-Rudziński
    Academic press:
    Przegląd Elektrotechniczny (rok: 2017, tom: 1, strony: 20-23), Wydawca: SIGMA-NOT
    Status:
    Published
    DOI:
    10.15199/48.2017.08.05 - link to the publication
  7. Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot–quantum well structures emitting at telecom spectral range
    Authors:
    W. Rudno-Rudziński, D. Biegańska, J. Misiewicz, F. Lelarge, B. Rousseau, G. Sęk
    Academic press:
    Applied Physics Letters (rok: 2018, tom: 112, strony: 051103-1-5), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.5016436 - link to the publication
  8. Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures
    Authors:
    W. Rudno-Rudziński, M. Syperek, J. Andrzejewski, E. Rogowicz, G. Eisenstein, S. Bauer, V. I. Sichkovskyi, J. P. Reithmaier, G. Sęk
    Academic press:
    Scientific Reports (rok: 2018, tom: 8, strony: 12317-1-10), Wydawca: Springer Nature
    Status:
    Published
    DOI:
    10.1038/s41598-018-30950-4 - link to the publication
  1. The issue of 0D-like ground state isolation in GaAs- and InP-based coupled quantum dots quantum well systems
    Authors:
    M. Syperek, J. Andrzejewski,W. Rudno-Rudziński1, A. Maryński1, G. Sęk, J. Misiewicz, J. P. Reithmaier, A. Somers, S. Hoefling
    Conference:
    20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures 2017 (EDISON 20) (rok: 2017, ), Wydawca: Institute of Physics Publishing
    Data:
    konferencja 17-21 lipca 2017
    Status:
    Published
    DOI:
    link to the publication

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