Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

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Band gap engineering in Ga(Si)Sn alloys and their low dimensional heterostructures dedicated for laser aplications

2013/09/B/ST7/02395

Keywords:

Semiconductors Band structure Optical gain Optical properties

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

woj. dolnośląskie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Marta Gładysiewicz-Kudrawiec 

Number of co-investigators in the project: 7

Call: OPUS 5 - announced on 2013-03-15

Amount awarded: 632 440 PLN

Project start date (Y-m-d): 2014-03-12

Project end date (Y-m-d): 2016-03-11

Project duration:: 24 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Spektrometr na podczerwień (73 800 PLN)
  2. Komora ciśnieniowa z wyposażeniem (66 174 PLN)

Information in the final report

  • Publication in academic press/journals (6)
  1. Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells
    Authors:
    M. Gladysiewicz, R. Kudrawiec, and M. S. Wartak
    Academic press:
    Journal of Applied Physics (rok: 2014, tom: 115, strony: 33515), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4862230 - link to the publication
  2. Electronic band structure of compressively strained Ge1-xSnx with x<0.11 studied by contactless electroreflectance
    Authors:
    K. Zelazna, M. P. Polak, P. Scharoch, J. Serafinczuk, M. Gladysiewicz, J. Misiewicz, J. Dekoster, and R. Kudrawiec
    Academic press:
    Applied Physics Letters (rok: 2015, tom: 106, strony: 142102), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4917236 - link to the publication
  3. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform
    Authors:
    H. S. Maczko, R. Kudrawiec, and M. Gladysiewicz
    Academic press:
    Scentific Reports (rok: 2016, tom: 6, strony: 6:34082), Wydawca: Nature publishing group
    Status:
    Published
    DOI:
    10.1038/srep34082 - link to the publication
  4. Temperature dependence of energy gap of Ge1−xSnx alloys with x < 0.11 studied by photoreflectance
    Authors:
    K. Zelazna, M. Wełna, J. Misiewicz, J. Dekoster and R. Kudrawiec
    Academic press:
    Journal of Physics D (rok: 2016, tom: 49, strony: 235301), Wydawca: IOP Publising
    Status:
    Published
    DOI:
    10.1088/0022-3727/49/23/235301 - link to the publication
  5. The electronic band structure of Ge1−x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect
    Authors:
    M. P. Polak, P. Scharoch, and R. Kudrawiec
    Academic press:
    Phys. D: Appl. Phys (rok: 2017, tom: 50, strony: 195103), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1088/1361-6463/aa67bfJ - link to the publication
  6. Electromodulation spectroscopy of direct optical transitions in Ge1-xSnx layers under hydrostatic pressure and built-in strain
    Authors:
    F. Dybała, K. Żelazna, H. Maczko, M. Gladysiewicz, J. Misiewicz, R. Kudrawiec, H. Lin, R. Chen, C. Shang, Y. Huo, T. I. Kamins, and J. S. Harris
    Academic press:
    Journal of Applied Physics (rok: 2016, tom: 119, strony: 215703), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4953220 - link to the publication

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