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Band gap engineering in Ga(Si)Sn alloys and their low dimensional heterostructures dedicated for laser aplications

2013/09/B/ST7/02395

Keywords

Descriptors

  • ST7_2: Elektrotechnika, elektronika: półprzewodniki, elementy i układy, systemy
  • ST7_5: Mikro- i nanoelektronika, optoelektronika

Panel

ST7 – Systems and communication engineering: electronics, communication, optoelectronics

Host institution

Politechnika Wrocławska, Wydział Podstawowych Problemów Techniki

Voivodeship: dolnośląskie

Other projects carried out by the institution »

Principal investigator (from the host institution)

dr Marta Gładysiewicz-Kudrawiec

Number of co-investigators in the project: 7

Call

OPUS 5 – announced on 2013-03-15

Amount awarded
632 440 PLN
Project start date
2014-03-12
Project end date
2016-03-11
Project duration
24 months (the same as in the proposal)
Project status
Project settled

Equipment purchased [PL]

  1. Komora ciśnieniowa z wyposażeniem. Cost: 66 174 PLN
  2. Spektrometr na podczerwień. Cost: 73 800 PLN

Information in the final report

Publication in academic press/journals (6)

  1. Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells

    Authors:
    M. Gladysiewicz, R. Kudrawiec, and M. S. Wartak
    Academic press:
    Journal of Applied Physics (year: 2014, volume: 115, pages: 33515), Publisher: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4862230 – link to the publication

  2. Temperature dependence of energy gap of Ge1−xSnx alloys with x < 0.11 studied by photoreflectance

    Authors:
    K. Zelazna, M. Wełna, J. Misiewicz, J. Dekoster and R. Kudrawiec
    Academic press:
    Journal of Physics D (year: 2016, volume: 49, pages: 235301), Publisher: IOP Publising
    Status:
    Published
    DOI:
    10.1088/0022-3727/49/23/235301 – link to the publication

  3. The electronic band structure of Ge1−x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect

    Authors:
    M. P. Polak, P. Scharoch, and R. Kudrawiec
    Academic press:
    Phys. D: Appl. Phys (year: 2017, volume: 50, pages: 195103), Publisher: American Institute of Physics
    Status:
    Published
    DOI:
    10.1088/1361-6463/aa67bfJ – link to the publication

  4. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

    Authors:
    H. S. Maczko, R. Kudrawiec, and M. Gladysiewicz
    Academic press:
    Scentific Reports (year: 2016, volume: 6, pages: 6:34082), Publisher: Nature publishing group
    Status:
    Published
    DOI:
    10.1038/srep34082 – link to the publication

  5. Electromodulation spectroscopy of direct optical transitions in Ge1-xSnx layers under hydrostatic pressure and built-in strain

    Authors:
    F. Dybała, K. Żelazna, H. Maczko, M. Gladysiewicz, J. Misiewicz, R. Kudrawiec, H. Lin, R. Chen, C. Shang, Y. Huo, T. I. Kamins, and J. S. Harris
    Academic press:
    Journal of Applied Physics (year: 2016, volume: 119, pages: 215703), Publisher: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4953220 – link to the publication

  6. Electronic band structure of compressively strained Ge1-xSnx with x<0.11 studied by contactless electroreflectance

    Authors:
    K. Zelazna, M. P. Polak, P. Scharoch, J. Serafinczuk, M. Gladysiewicz, J. Misiewicz, J. Dekoster, and R. Kudrawiec
    Academic press:
    Applied Physics Letters (year: 2015, volume: 106, pages: 142102), Publisher: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4917236 – link to the publication

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