Projects funded by the NCN


Information on the principal investigator and host institution

Information of the project and the call

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Application of computational physics to study the influence of structural defects on the properties of silicon carbide devices

2013/09/B/ST7/04203

Keywords:

SiC ab inito Monte Carlo defects silicon carbide computational physics

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST7_3: Simulation engineering and modelling
  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Politechnika Łódzka, Wydział Elektrotechniki, Elektroniki, Informatyki i Automatyki

woj. łódzkie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Włodzimierz Nakwaski 

Number of co-investigators in the project: 8

Call: OPUS 5 - announced on 2013-03-15

Amount awarded: 829 318 PLN

Project start date (Y-m-d): 2014-04-24

Project end date (Y-m-d): 2018-04-23

Project duration:: 48 months (the same as in the proposal)

Project status: Project settled

Information in the final report

  • Publication in academic press/journals (3)
  • Articles in post-conference publications (7)
  • Book publications / chapters in book publications (2)
  1. Monte Carlo simulations of electron transport in 4H‑SiC using the DFT‑calculated density of states
    Authors:
    Janusz Wozny, Andrii Kovalchuk, Zbigniew Lisik, Jacek Podgorski, Piotr Bugalski, Andrzej Kubiak, Lukasz Ruta
    Academic press:
    Journal of Computational Electronics (rok: 2021, tom: 20, strony: 791–797), Wydawca: Springer Nature
    Status:
    Published
    DOI:
    10.1007/s10825-021-01658-y - link to the publication
  2. Extended Hückel Semi-Empirical Approach as an Efficient Method for Structural Defects Analysis in 4H-SiC
    Authors:
    Janusz Wozny, Andrii Kovalchuk, Jacek Podgorski and Zbigniew Lisik
    Academic press:
    Materials (rok: 2021, tom: 14, strony: 1247), Wydawca: MDPI AG
    Status:
    Published
    DOI:
    10.3390/ma14051247 - link to the publication
  3. Monte Carlo simulations of hole transport in 4H-SiC using DOS calculations
    Authors:
    Andrii Kovalchuk, Janusz Wozny, Zbigniew Lisik, Jacek Podgorski, Lukasz Ruta, Andrzej Kubiak, Armen Boiadzhian
    Academic press:
    Journal of Physics: Conference Series (rok: 2020, tom: 1534, strony: 45296), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.1088/1742-6596/1534/1/012006 - link to the publication
  1. Effect of Point Defects for 4H-SiC Band Structure by the Means of Ab-Initio Calculation
    Authors:
    Janusz Woźny, Łukasz Ruta, Andrzej Kubiak, Zbigniew Lisik, Jacek Podgórski, Andrii Kovalchuk, Natalia Szczecińska, Piotr Bugalski
    Conference:
    MICROTHERM 2017 (rok: 2017, ), Wydawca: Lodz University of Technology
    Data:
    konferencja 2017-06-27 - 2017-06-29
    Status:
    Published
  2. Investigation on Micropipes and Structural Defects Densities in 4H-SiC Substrates
    Authors:
    Andrzej Kubiak, Anna Paprocka, Maciej Wendler, Łukasz Ruta, Janusz Woźny
    Conference:
    MICROTHERM 2017 (rok: 2017, ), Wydawca: Lodz University of Technology
    Data:
    konferencja 2017-06-27 - 2017-06-29
    Status:
    Published
  3. Ensemble Monte Carlo simulation of 4H-SiC for electrons mobility calculation
    Authors:
    Andrii Kovalchuk; Janusz Wozny, Zbigniew Lisik, Jacek Podgorski, Piotr Bugalski, Mykhaylo Lobur, Petro Kosobutskyy
    Conference:
    XIV-th International Conference on Perspective Technologies and Methods in MEMS Design (MEMSTECH) (rok: 2018, ), Wydawca: IEEE
    Data:
    konferencja 18-22 April 2018
    Status:
    Published
  4. DFT simulation of stacking faults defects in 4H-SiC
    Authors:
    Janusz Wozny, Andrii Kovalchuk, Zbigniew Lisik, Jacek Podgorski, Piotr Bugalski, Andrzej Kubiak, Lukasz Ruta
    Conference:
    XIV-th International Conference on Perspective Technologies and Methods in MEMS Design (MEMSTECH) (rok: 2018, ), Wydawca: IEEE
    Data:
    konferencja 18-22 April 2018
    Status:
    Published
  5. Mobility of Electrons in Doped Bulk 4H-SiC
    Authors:
    A. Kovalchuk, J. Wozny, D. Illiano, A. Kubiak, L. Ruta, J. Podgórski, Z. Lisik
    Conference:
    MICROTHERM 2019 Microtechnology and Thermal Problems in Electronics (rok: 2019, ), Wydawca: Lodz University of Technology
    Data:
    konferencja 24-26 VI 2019
    Status:
    Published
  6. Monte Carlo simulation of hole transport in 4H-SiC using effective parameters
    Authors:
    A. Kovalchuk, J. Woźny, Z. Lisik, J. Podgorski, Ł. Ruta, A. Kubiak, A. Boiadzhian
    Conference:
    MICROTHERM 2019 Microtechnology and Thermal Problems in Electronics (rok: 2019, ), Wydawca: Lodz University of Technology
    Data:
    konferencja 24-26 VI 2019
    Status:
    Published
  7. Monte Carlo Electron Transport Simulation of 4H-SiC using DFT Calculated Density of States
    Authors:
    J. Woźny, A. Kovalchuk, Z. Lisik, J. Podgorski, P. Bugalski, A. Kubiak, Ł. Ruta
    Conference:
    CSC'18 - The 16th Int'l Conf on Scientific Computing (rok: 2018, ), Wydawca: American Council on Science and Education
    Data:
    konferencja Jul 30-Aug 02, 2018
    Status:
    Published
  1. DFT Simulation of Stacking Faults Defects in 4H-SiC
    Authors:
    Wozny, Janusz and Kovalchuk, Andrii and Lisik, Zbigniew and Podgorski, Jacek and Bugalski, Piotr and Kubiak, Andrzej and Ruta, Lukasz
    Book:
    2018 Xivth International Conference on Perspective Technologies and Methods in Mems Design (Memstech) (rok: 2018, tom: -na-, strony: 65-68), Wydawca: IEEE
    Status:
    Published
  2. Ensemble Monte Carlo Simulation of 4H-SiC for Electrons Mobility Calculation
    Authors:
    Kovalchuk, Andrii and Wozny, Janusz and Lisik, Zbigniew and Podgorski, Jacek and Bugalski, Piotr and Lobur, Mykhaylo and Kosobutskyy, Petro
    Book:
    2018 Xivth International Conference on Perspective Technologies and Methods in Mems Design (Memstech) (rok: 2018, tom: -na-, strony: 73-76), Wydawca: IEEE
    Status:
    Published