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Influence of the growth conditions, doping and thermal processing on the defect structure of zinc oxide thin films obtained by the epitaxial methods

2013/09/D/ST5/03879

Keywords

Descriptors

  • ST5_1: Właściwości strukturalne materiałów
  • ST5_4: Cienkie warstwy
  • ST5_8: Nowe materiały: tlenki, stopy, kompozyty, hybrydy organiczno-nieorganiczne, nadprzewodniki

Panel

ST5 – Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering

Host institution

Instytut Fizyki PAN

Voivodeship: mazowieckie

Other projects carried out by the institution »

Principal investigator (from the host institution)

dr Tomasz Aleksander Krajewski

Number of co-investigators in the project: 5

Call

SONATA 5 – announced on 2013-03-15

Amount awarded
470 500 PLN
Project start date
2014-02-18
Project end date
2017-02-17
Project duration
36 months (the same as in the proposal)
Project status
Project settled

Equipment purchased [PL]

  1. Opcja rozszerzająca zakres częstotliwości pomiarowych lock-ina firmy Zurich Instruments. Cost: 11 404 PLN
  2. Opcja "MI–IA" pozwalająca zwiększyć dokładność pomiaru bezwzględnej wartości impedancji w lock-inie firmy Zurich Instruments. Cost: 3 595 PLN
  3. Uniwersalny miernik impedancji (LCR). Cost: 100 000 PLN

Information in the final report

Publication in academic press/journals (6)

  1. Tuning the properties of ALD-ZnO-based rectifying structures by thin dielectric film insertion - Modeling and experimental studies

    Authors:
    T.A. Krajewski, P.S. Smertenko, G. Łuka, D. Snigurenko, K. Kopalko, E. Łusakowska, R. Jakieła, E. Guziewicz
    Academic press:
    Journal of Alloys and Compounds (year: 2017, volume: 693, pages: 1164-1173), Publisher: ELSEVIER SCIENCE SA (Szwajcaria)
    Status:
    Published
    DOI:
    10.1016/j.jallcom.2016.10.085 – link to the publication

  2. Improved efficiency of n-ZnO/p-Si based photovoltaic cells by band offset engineering

    Authors:
    R. Pietruszka, R. Schifano, T.A. Krajewski, B. S. Witkowski, K. Kopalko, Ł. Wachnicki, E. Zielony, K. Gwóźdź, P. Biegański, E. Płaczek-Popko, M. Godlewski
    Academic press:
    Solar Energy Materials and Solar Cells (year: 2016, volume: 147, pages: 164 - 170), Publisher: ELSEVIER SCIENCE BV (Holandia)
    Status:
    Published
    DOI:
    10.1016/j.solmat.2015.12.018 – link to the publication

  3. Diversity of contributions leading to the nominally n-type behavior of ZnO films obtained by low temperature Atomic Layer Deposition

    Authors:
    T.A. Krajewski, P. Terziyska, G. Łuka, E. Łusakowska, R. Jakieła, E.S. Vlakhov, E. Guziewicz
    Academic press:
    Journal of Alloys and Compounds (year: 2017, volume: 727, pages: 902 - 911), Publisher: ELSEVIER SCIENCE SA (Szwajcaria)
    Status:
    Published
    DOI:
    10.1016/j.jallcom.2017.08.206 – link to the publication

  4. N and al co-doping as a way to p-type ZnO without post-growth annealing

    Authors:
    D. Snigurenko, E. Guziewicz, T.A. Krajewski, R. Jakieła, Y. Syryanyy, K. Kopalko, W. Paszkowicz
    Academic press:
    Materials Research Express (year: 2016, volume: 3, pages: 125907), Publisher: IOP PUBLISHING LTD (Wlk. Brytania - Anglia)
    Status:
    Published
    DOI:
    10.1088/2053-1591/3/12/125907 – link to the publication

  5. Role of the hafnium dioxide spacer in the ZnO-based planar Schottky diodes obtained by the low-temperature Atomic Layer Deposition method: Investigations of current-voltage characteristics

    Authors:
    A.J. Zakrzewski, T.A. Krajewski, G. Łuka, K. Gościński, E. Guziewicz, M. Godlewski
    Academic press:
    IEEE Transactions on Electron Devices (year: 2015, volume: 62, pages: 630-633), Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC (USA)
    Status:
    Published
    DOI:
    10.1109/TED.2014.2376979 – link to the publication

  6. Analysis of scattering mechanisms in zinc oxide films grown by the atomic layer deposition technique

    Authors:
    T. A. Krajewski, K. Dybko, G. Łuka, Ł. Wachnicki, K. Kopalko, W. Paszkowicz, M. Godlewski, E. Guziewicz
    Academic press:
    Journal of Applied Physics (year: 2015, volume: 118, pages: 35706), Publisher: AMER. INST. PHYSICS/AIP PUBLISHING (USA)
    Status:
    Published
    DOI:
    10.1063/1.4927294 – link to the publication

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