Projects funded by the NCN


Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Accurate modelling of traps in metal/insulator/4H-SiC structures by means of thermally stimulated current (TSC).

2012/07/B/ST7/01336

Keywords:

wide bandgap materials metal/insulator/semiconductor structure MIS electrical characterization TSC thermally stimulated current

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Jan Szmidt 

Number of co-investigators in the project: 7

Call: OPUS 4 - announced on 2012-09-15

Amount awarded: 955 065 PLN

Project start date (Y-m-d): 2013-07-11

Project end date (Y-m-d): 2015-07-10

Project duration:: 24 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Drukarka.
  2. Specjalizowane stanowisko do pomiarów ostrzowych struktur mikroelektronicznych w zakresie temperatur 10K - 325 K zasilane ciekłym helem w obiegu zamkniętym (500 000 PLN)
  3. Moduł laserowy.

Information in the final report

  • Publication in academic press/journals (5)
  1. Analiza płytkich stanów pułapkowych w strukturach MOS Al/ZrO2/SiO2/4H-SiC metodą TSC
    Authors:
    Krystian Król, Mariusz Sochacki, Michał Waśkiewicz, Jan Szmidt
    Academic press:
    Elektronika: konstrukcje, technologie, zastosowania (rok: 2015, tom: 56, strony: 56-58), Wydawca: SIGMA-NOT
    Status:
    Published
    DOI:
    10.15199/13/2015.11.13 - link to the publication
  2. Charge pumping characterization of MISFETs with SiO2/BaTiO3 as a gate stack
    Authors:
    Piotr Firek, Grzegorz Głuszko, Lidia Łukasiak, Jan Szmidt, Andrzej Jakubowski, Mariusz Sochacki
    Academic press:
    Przegląd Elektrotechniczny (rok: 2014, tom: 90, strony: 26-28), Wydawca: SIGMA_NOT
    Status:
    Published
    DOI:
    10.12915/pe.2014.09.08 - link to the publication
  3. Influence of phosphorus implantation on electrical properties of Al/SiO2/4H-SiC MOS structure
    Authors:
    Krystian Król, Mariusz Sochacki, Marcin Turek, Jerzy Żuk, Paweł Borowicz, Dominika Teklińska, Piotr Konarski, Maciej Miśnik, Alina Domanowska, Anna Michalewicz, Jan Szmidt
    Academic press:
    Materials Science Forum (rok: 2015, tom: 821-823, strony: 496-499), Wydawca: Trans Tech Publications Inc.
    Status:
    Published
    DOI:
    10.4028/www.scentific.net/MSF.821-823.496 - link to the publication
  4. Interface traps in Al/SiO2/HfO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique
    Authors:
    Mariusz Sochacki, Krystian Król, Michał Waśkiewicz, Katarzyna Racka, Jan Szmidt
    Academic press:
    Microelectronic Engineering (rok: 2016, tom: 157, strony: 46-51), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mee.2016.02.047 - link to the publication
  5. Chlorine-enhanced thermal oxides growth and significant trap density reduction at SiO2/SiC interface by incorporation of phosphorus
    Authors:
    Krystan Król, Mariusz Sochacki, Włodzimierz Strupiński, Katarzyna Racka, Marek Guziewicz, Piotr Konarski, Maciej Miśnik, Jan Szmidt
    Academic press:
    Thin Solid Films (rok: 2015, tom: 591, strony: 86-89), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.tsf.2015.08.028 - link to the publication