Projects funded by the NCN


Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Microstructural and chemical determinants of acceptor and donor conductivity of zinc oxide grown at low temperature

2012/07/B/ST3/03567

Keywords:

zinc oxide atomic layer deposition transport properties

Descriptors:

  • ST3_4: Electronic properties of materials, surfaces, interfaces, nanostructures, etc.
  • ST3_5: Physical properties of semiconductors and insulators
  • ST3_7: Spintronics

Panel:

ST3 - Condensed matter physics: structure, electronic properties, fluids, nanosciences, biological physics

Host institution :

Instytut Fizyki PAN

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

prof. Elżbieta Guziewicz 

Number of co-investigators in the project: 7

Call: OPUS 4 - announced on 2012-09-15

Amount awarded: 687 820 PLN

Project start date (Y-m-d): 2013-07-11

Project end date (Y-m-d): 2017-03-10

Project duration:: 44 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Komora reakcyjna ALD (2 szt.) (40 000 PLN)
  2. Układ mikroskopowy do precyzyjnego pozycjonowania warstw ZnO podczas pomiarów elektrycznych (100 000 PLN)
  3. Układ mikroskopowy do precyzyjnego pozycjonowania warstw ZnO podczas pomiarów elektrycznych, umożliwijący pomiary C-V oraz pomiary małych prądów rzędu pA..

Information in the final report

  • Publication in academic press/journals (5)
  1. Electrical and structural characterization of nitrogen doped ZnO layers grown at low temperature by atomic layer deposition
    Authors:
    Vl. Kolkovsky, D. Snigurenko, R. Jakiela, E. Guziewicz
    Academic press:
    Semiconductor Science and Technology (rok: 2014, tom: 29, strony: 085006 (6pp)), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.1088/0268-1242/29/8/085006 - link to the publication
  2. Nitrogen doped p-type ZnO films and p-n homojunction
    Authors:
    D. Snigurenko, T.A. Krajewski, R. Jakiela, E. Guziewicz
    Academic press:
    Semiconductor Science and Technology (rok: 2015, tom: 30, strony: 015001 (6 pp)), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.1088/0268-1242/30/1/015001 - link to the publication
  3. Abundant Acceptor Emission from Nitrogen-Doped ZnO Films Prepared by Atomic Layer Deposition under Oxygen-Rich Conditions
    Authors:
    E. Guziewicz, E. Przezdziecka, D. Snigurenko, D. Jarosz, B.S. Witkowski, P. Dluzewski, W. Paszkowicz
    Academic press:
    ACS Applied Materials & Interfaces (rok: 2017, tom: 9, strony: 26143−26150), Wydawca: American Chemical Society
    Status:
    Published
    DOI:
    10.1021/acsami.7b04127 - link to the publication
  4. N and Al co-doping as a way to p-type ZnO without post-growth annealing
    Authors:
    Dymitr Snigurenko, Elzbieta Guziewicz, Tomasz A. Krajewski, Rafal Jakiela, Yevgen Syryanyy, Krzysztof Kopalko and Wojciech Paszkowicz
    Academic press:
    Materials Research Express (rok: 2016, tom: 3, strony: 125907 (1-8)), Wydawca: IOP Publishing Ltd
    Status:
    Published
    DOI:
    10.1088/2053-1591/3/12/125907 - link to the publication
  5. XPS study of arsenic doped ZnO grown by Atomic Layer Deposition
    Authors:
    D. Snigurenko, R. Jakiela, E. Guziewicz, E. Przezdziecka, M. Stachowicz, K. Kopalko, A. Barcz, W. Lisowski, J.W. Sobczak, M. Krawczyk, A. Jablonski
    Academic press:
    Journal of Alloys and Compounds (rok: 2014, tom: 582, strony: 594-597), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.jallcom.2013.08.061 - link to the publication