Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study
Authors:
J. Kopaczek, W.M. Linhart, M. Baranowski, R.D. Richards, F. Bastiman, J.P.R. David, and R. Kudrawiec
Academic press:
Semiconductor Science and Technology (rok: 2015, tom: 30, strony: 094005-7), Wydawca: IoP Publishing
Photoacoustic spectroscopy of absorption edge for GaAsBi/GaAs nanowires grown on Si substrate
Authors:
S.J. Zelewski, J. Kopaczek, W. M. Linhart, F. Ishikawa, S. Shimomura, and R. Kudrawiec
Academic press:
Applied Physics Letters (rok: 2016, tom: 109, strony: 182106), Wydawca: American Institute of Physics
Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys
Authors:
J. Kopaczek, M. K. Rajpalke, W. M. Linhart, T. S. Jones, M. J. Ashwin, R. Kudrawiec and T. D. Veal
Academic press:
Applied Physics Letters (rok: 2014, tom: 105, strony: 112102), Wydawca: American Institute of Physics
Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers
Authors:
R. Kudrawiec, P. Sitarek, M. Gladysiewicz, J. Misiewicz, Y. He, Y. Jin, G. Vardar, A. M. Mintarov, J. L. Merz, R. S. Goldman, K.-M. Yu, and W. Walukiewicz
Academic press:
Thin Solid Films (rok: 2014, tom: 567, strony: 101), Wydawca: Elsevier
Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells
Authors:
R. Kudrawiec, J. Kopaczek, M. P. Polak, P. Scharoch, M. Gladysiewicz, J. Misiewicz, R. D. Richards, F. Bastiman and J. P. R. David
Academic press:
Journal of Applied Physics (rok: 2014, tom: 116, strony: 233508), Wydawca: American Institute of Physics
Low- and high-energy photoluminescence from GaSb1-xBix with 0 < x <= 0.042
Authors:
J. Kopaczek, R. Kudrawiec, W. Linhart, M. Rajpalke, T. Jones, M. Ashwin and T. Veal
Academic press:
Applied Physics Express (rok: 2014, tom: 7, strony: 111202), Wydawca: The Japan Society of Applied Physics
Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy
Authors:
M. Baranowski, R. Kudrawiec, J. Misiewicz, M. Hammar
Academic press:
Applied Physics A (rok: 2015, tom: 118, strony: 479-486), Wydawca: Springer
Band anticrossing in ZnOSe highly mismatched alloy
Authors:
M. Welna, R. Kudrawiec, Y. Nabetani and W. Walukiewicz
Academic press:
Applied Physics Letters (rok: 2014, tom: 7, strony: 71202), Wydawca: The Japan Society of Applied Physics
Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1-xBix dilute bismide alloys
Authors:
Ł. Gelczuk, H. Stokowski, J. Kopaczek, L. Zhang, Y. Li, K. Wang, P. Wang, S. Wang, and R. Kudrawiec
Academic press:
Journal of Physics D (rok: 2016, tom: 49, strony: 115107), Wydawca: IoP Publishing
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Authors:
Ł. Gelczuk, J. Kopaczek, T. B. O. Rockett, R. D. Richards, R. Kudrawiec
Academic press:
Scientific Reports (rok: 2017, tom: 7, strony: 12824), Wydawca: Nature Publishing Group
High Bi content GaSbBi alloys
Authors:
M. K. Rajpalke, W. M. Linhart, M. Birkett, K. M. Yu, J. Alaria, J. Kopaczek, R. Kudrawiec, T. S. Jones, M. J. Ashwin and T. D. Veal
Academic press:
Journal of Applied Physics (rok: 2014, tom: 116, strony: 43511), Wydawca: American Institute of Physics
Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance
Authors:
J. Kopaczek, R. Kudrawiec, W. M. Linhart, M. K. Rajpalke, K. M. Yu, T. S. Jones, M. J. Ashwin, J. Misiewicz and T. D. Veal
Academic press:
Applied Physics Letters (rok: 2013, tom: 103, strony: 261907), Wydawca: American Institute of Physics
Enhancement of activation energies of sharp photoluminescence lines for GaInNAs quantum wells due to quantum confinement
Authors:
M. Latkowska, R. Kudrawiec, J. Misiewicz, Y. Galvao Gobato, M. Henini, and M. Hopkinson
Academic press:
Journal of Physics D (rok: 2013, tom: 46, strony: 402001), Wydawca: Institute of Physics
Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing
Authors:
Ł. Gelczuk, R. Kudrawiec and M. Henini
Academic press:
Journal of Applied Physics (rok: 2014, tom: 116, strony: 13705), Wydawca: American Institute of Physics
Optical and spin properties of localized and free excitons in GaBi x As1−x /GaAs multiple quantum wells
Authors:
M. A. G. Balanta, J. Kopaczek, V. Orsi Gordo, B. H. B. Santos, A. D. Rodrigues, H. V. A. Galeti, R. D. Richards, F. Bastiman, J. P. R. David, R. Kudrawiec, and Y. Galvão Gobato
Academic press:
Journal of Physics D: Applied Physics (rok: 2016, tom: 49, strony: 355104), Wydawca: Institute of Physics
Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy
Authors:
Ł. Gelczuk, H. Stokowski, M. Dąbrowska-Szata, and R. Kudrawiec
Academic press:
Journal of Applied Physics (rok: 2016, tom: 119, strony: 185706), Wydawca: American Institute of Physics
Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells
Authors:
M. Baranowski, R. Kudrawiec, M. Syperek, J. Misiewicz, T. Sarmiento and J. S. Harris
Academic press:
Nanoscale Research Letters (rok: 2014, tom: 9, strony: 81), Wydawca: Springer
Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure
Authors:
F. Dybała, J. Kopaczek, M. Gladysiewicz, E.-M. Pavelescu, C. Romanitan, O. Ligor, A. Arnoult, C. Fontaine, and R. Kudrawiec
Academic press:
Applied Physics Letters (rok: 2017, tom: 111, strony: 192104), Wydawca: American Institute of Physics
First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data
Authors:
M. P. Polak, P. Scharoch, and R. Kudrawiec
Academic press:
Semiconductor Science and Technology (rok: 2015, tom: 30, strony: 094001-9), Wydawca: IoP Publishing
Temperature dependence of band gaps in dilute bismides
Authors:
W. Linhart and R. Kudrawiec
Academic press:
Semiconductor Science and Technology (rok: 2018, tom: 33, strony: 73001), Wydawca: Institute of Physics
The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys
Authors:
M. Latkowska, M. Baranowski, W.M. Linhart, F. Janiaka, J. Misiewicz, N. Segercrantz, F. Tuomisto, Q. Zhuang, A. Krier, and R. Kudrawiec
Academic press:
Journal of Physics D (rok: 2016, tom: 49, strony: 115105-7), Wydawca: IoP Publishing
Theoretical and experimental studies of electronic band structure for GaSb1-xBix in the dilute Bi regime
Authors:
M. P. Polak, P. Scharoch, R. Kudrawiec, J. Kopaczek, M. J. Winiarski, W. M. Linhart, M. K. Rajpalke, K. M. Yu, T. S. Jones, M. J. Ashwin and T. D. Veal
Academic press:
Journal of Physics D: Applied Physics (rok: 2014, tom: 47, strony: 355107), Wydawca: IOP Publishing