Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

Equipment

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Influence of phosphorus on electro-physical properties of dielectric layers obtained by thermal oxidation of 4H-SiC

2012/05/N/ST7/02035

Keywords:

microelectronics silicon carbide thermal oxidation

Descriptors:

  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
  • ST7_2: Electrical engineering: power components and/or systems

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

Krystian Król 

Number of co-investigators in the project: 3

Call: PRELUDIUM 3 - announced on 2012-03-15

Amount awarded: 149 998 PLN

Project start date (Y-m-d): 2013-03-25

Project end date (Y-m-d): 2016-03-24

Project duration:: 36 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Monitor LCD o wysokiej rozdzielczości (1 200 PLN)

Information in the final report

  • Publication in academic press/journals (4)
  1. Depth Profile Analysis of Phosphorus Implanted SiC Structures
    Authors:
    P. Konarski, K. Król, M. Miśnik, M. Sochacki, J. Szmidt, M. Turek, J. Żuk
    Academic press:
    Acta Physica Polonica A (rok: 2015, tom: 128, strony: 864-866), Wydawca: Polish Academy of Sciences Institute of Physics
    Status:
    Published
    DOI:
    10.12693/APhysPolA.128.864 - link to the publication
  2. The Effect of Phosphorus Incorporation into SiO_2/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
    Authors:
    K. Król, P. Konarski, M. Miśnik, M. Sochacki, J. Szmidt
    Academic press:
    Acta Physica Polonica A (rok: 2014, tom: 126/5, strony: 1100-1103), Wydawca: Polska Akademia Nauk
    Status:
    Published
    DOI:
    10.12693/APhysPolA.126.1100 - link to the publication
  3. Utlenianie węglika krzemu: charakteryzacja procesu i metody symulacji kinetyki
    Authors:
    K. Król, M. Sochacki, J. Szmidt
    Academic press:
    Elektronika: konstrukcje, technologie, zastosowania (rok: 2014, tom: 55/7, strony: 141-148), Wydawca: Sigma-Not
    Status:
    Published
    DOI:
    10.15199/ELE-2014-086 - link to the publication
  4. Influence Of Phosphorus Implantation On Electrical Properties Of Al/SiO2/4H-SiC MOS structure
    Authors:
    K. Król, M. Sochacki, M. Turek, J. Żuk, P. Borowicz, D. Teklińska, P. Konarski, M. Miśnik, A. Domanowska, A. Michalewicz, J. Szmidt
    Academic press:
    Material Science Forum (rok: 2015, tom: 821-823, strony: 496-499), Wydawca: Trans-tech Publications
    Status:
    Published
    DOI:
    10.4028/www.scientific.net/MSF.821-823.496 - link to the publication

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