Influence of phosphorus on electro-physical properties of dielectric layers obtained by thermal oxidation of 4H-SiC
2012/05/N/ST7/02035
Keywords
Descriptors
- ST7_5: Mikro- i nanoelektronika, optoelektronika
- ST7_2: Elektrotechnika, elektronika: półprzewodniki, elementy i układy, systemy
Panel
ST7 – Systems and communication engineering: electronics, communication, optoelectronics
Host institution
Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych
Voivodeship: mazowieckie
Principal investigator (from the host institution)
Number of co-investigators in the project: 3
Call
PRELUDIUM 3 – announced on 2012-03-15
- Amount awarded
- 149 998 PLN
- Project start date
- 2013-03-25
- Project end date
- 2016-03-24
- Project duration
- 36 months (the same as in the proposal)
- Project status
- Project settled
Equipment purchased [PL]
- Monitor LCD o wysokiej rozdzielczości. Cost: 1 200 PLN
Information in the final report
Publication in academic press/journals (4)
-
Utlenianie węglika krzemu: charakteryzacja procesu i metody symulacji kinetyki
- Authors:
- K. Król, M. Sochacki, J. Szmidt
- Academic press:
- Elektronika: konstrukcje, technologie, zastosowania (year: 2014, volume: 55/7, pages: 141-148), Publisher: Sigma-Not
- Status:
- Published
- DOI:
- 10.15199/ELE-2014-086 – link to the publication
-
Depth Profile Analysis of Phosphorus Implanted SiC Structures
- Authors:
- P. Konarski, K. Król, M. Miśnik, M. Sochacki, J. Szmidt, M. Turek, J. Żuk
- Academic press:
- Acta Physica Polonica A (year: 2015, volume: 128, pages: 864-866), Publisher: Polish Academy of Sciences Institute of Physics
- Status:
- Published
- DOI:
- 10.12693/APhysPolA.128.864 – link to the publication
-
Influence Of Phosphorus Implantation On Electrical Properties Of Al/SiO2/4H-SiC MOS structure
- Authors:
- K. Król, M. Sochacki, M. Turek, J. Żuk, P. Borowicz, D. Teklińska, P. Konarski, M. Miśnik, A. Domanowska, A. Michalewicz, J. Szmidt
- Academic press:
- Material Science Forum (year: 2015, volume: 821-823, pages: 496-499), Publisher: Trans-tech Publications
- Status:
- Published
- DOI:
- 10.4028/www.scientific.net/MSF.821-823.496 – link to the publication
-
The Effect of Phosphorus Incorporation into SiO_2/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
- Authors:
- K. Król, P. Konarski, M. Miśnik, M. Sochacki, J. Szmidt
- Academic press:
- Acta Physica Polonica A (year: 2014, volume: 126/5, pages: 1100-1103), Publisher: Polska Akademia Nauk
- Status:
- Published
- DOI:
- 10.12693/APhysPolA.126.1100 – link to the publication