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Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Design and numerical modeling of nBn-type HgCdTe structures and its production using MOCVD method to obtain high-temperature infrared detectors with improved detection parameters.

2011/03/D/ST7/03161

Keywords:

infrared detectors barrier structures multijunction structures HgCdTe heterostructures MOCVD

Descriptors:

  • ST7_2: Electrical engineering: power components and/or systems
  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
  • ST5_2: Solid-state materials

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego, Wydział Nowych Technologii i Chemii

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Małgorzata Kopytko 

Number of co-investigators in the project: 6

Call: SONATA 2 - announced on 2011-09-15

Amount awarded: 785 100 PLN

Project start date (Y-m-d): 2012-09-03

Project end date (Y-m-d): 2015-09-02

Project duration:: 36 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. Przyrząd pomiarowo-sterujący NI VirtualBench + środowisko programistyczne LabVIEW (63 951 PLN)
  2. Stacja pomiaru niskich temperatur Montana Instruments (490 000 PLN)

Information in the final report

  • Publication in academic press/journals (9)
  • Articles in post-conference publications (2)
  1. MOCVD Grown HgCdTe Barrier Structures for HOT Conditions
    Authors:
    M. Kopytko, A.Kębłowski, W. Gawron, A. Kowalewski, A. Rogalski
    Academic press:
    IEEE Transactions On Electron Devices (rok: 2014, tom: 61(11), strony: 3803-3807), Wydawca: |IEEE Xplore Digital Library
    Status:
    Published
    DOI:
    10.1109/TED.2014.2359224 - link to the publication
  2. Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors
    Authors:
    M. Kopytko, A. Kębłowski, W. Gawron, P. Madejczyk
    Academic press:
    Opto-Electronics Review (rok: 2015, tom: 23, strony: 143-148), Wydawca: De Gruyter
    Status:
    Published
    DOI:
    10.1515/oere−2015−0017 - link to the publication
  3. Generation-Recombination Effect in MWIR HgCdTe Barrier Detectors for High-Temperature Operation
    Authors:
    M. Kopytko, K. Jóźwikowski
    Academic press:
    IEEE Transactions On Electron Devices (rok: 2015, tom: 62, strony: 2278-2284), Wydawca: IEEE Xplore Digital Library
    Status:
    Published
    DOI:
    10.1109/TED.2015.2430527 - link to the publication
  4. Numerical Analysis of Current–Voltage Characteristics of LWIR nBn and p-on-n HgCdTe Photodetectors
    Authors:
    M. Kopytko, K. Jóźwikowski
    Academic press:
    Journal of Electronic Materials (rok: 2013, tom: 42, strony: 3211-3216), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11664-013-2776-8 - link to the publication
  5. Design and modelling of high-operating temperature MWIR HgCdTe nBn detector with n- and p-type barriers
    Authors:
    M. Kopytko
    Academic press:
    Infrared Physics & Technology (rok: 2014, tom: 64, strony: 47–55), Wydawca: ScienceDirect
    Status:
    Published
    DOI:
    10.1016/j.infrared.2014.01.015 - link to the publication
  6. Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode
    Authors:
    M. Kopytko, K. Jóźwikowski, A. Rogalski
    Academic press:
    Solid-State Electronics (rok: 2014, tom: 100, strony: 20–26), Wydawca: ScienceDirect
    Status:
    Published
    DOI:
    10.1016/j.sse.2014.06.041 - link to the publication
  7. MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation
    Authors:
    M. Kopytko, A. Kębłowski, W. Gawron, P. Martyniuk, P. Madejczyk, K. Jóźwikowski, A. Kowalewski, O. Markowska, A. Rogalski
    Academic press:
    Optical Engineering (rok: 2015, tom: 54, strony: 105105-7), Wydawca: SPIE Digital Library
    Status:
    Published
    DOI:
    10.105105 - link to the publication
  8. High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD
    Authors:
    M. Kopytko, A. Kębłowski, W. Gawron, P. Madejczyk, A. Kowalewski, K. Jóźwikowski
    Academic press:
    Opto-Electronics Review (rok: 2013, tom: 21, strony: 402-405), Wydawca: Springer
    Status:
    Published
    DOI:
    10.2478/s11772−013−0101−y - link to the publication
  9. The bulk generation-recombination processes and the carrier lifetime in mid-wave infrared and long-wave infrared liquid nitrogen cooled HgCdTe alloys
    Authors:
    K. Jóźwikowski, M. Kopytko, A. Rogalski
    Academic press:
    Journal of Applied Physics (rok: 2012, tom: 112, strony: 033718-8), Wydawca: American Institute of Physics
    Status:
    Published
    DOI:
    10.1063/1.4745872 - link to the publication
  1. MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation
    Authors:
    M. Kopytko, A. Kębłowski, W. Gawron, P. Martyniuk, P. Madejczyk, K. Jóźwikowski, O. Markowska, A. Rogalski
    Conference:
    Infrared Technology and Applications XLI (rok: 2015, ), Wydawca: Proceedings of SPIE
    Data:
    konferencja 20-24.04.2015
    Status:
    Published
  2. Numerical analysis of fluctuation phenomena in HOT HgCdTe barrier detectors
    Authors:
    M. Kopytko, A. Jozwikowska, K. Jozwikowski, A. Martyniuk, J. Antoszewski, L. Faraone
    Conference:
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 (rok: 2014, ), Wydawca: IEEE Xplore Digital Library
    Data:
    konferencja 14-17 grudnia
    Status:
    Published
    DOI:
    link to the publication

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