Projects funded by the NCN
Technology of obtaining the ZnO crystals with a diameter of two inches for the manufacture of epitaxial substrates
2011/01/D/ST7/02657
Keywords:
Technology of semiconductor materials crystal growth substrates for epitaxy
Descriptors:
- ST7_2: Electrical engineering: power components and/or systems
- ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
- ST7_12: Electrical energy production, distribution and application
Panel:
ST7 - Systems and communication engineering: electronics, communication, optoelectronics
Host institution :
Instytut Fizyki Polskiej Akademii Nauk
woj. mazowieckie
Principal investigator (from the host institution):
Number of co-investigators in the project: 3
Call: SONATA 1 - announced on 2011-03-15
Amount awarded: 495 300 PLN
Project start date (Y-m-d): 2011-12-08
Project end date (Y-m-d): 2015-12-07
Project duration:: 48 months (the same as in the proposal)
Project status: Project settled
Equipment purchased [PL]
- Budowa pieca do wzrostu krysztalów o unowocześnionej konstrukcji (10 364 PLN)
- Komputer stacjonarny.
- Urządzenie do precyzyjnego lapowania i polerowania (Digiprep 301) (64 300 PLN)
- Aparat cyfrowy Canon + statyw (2 000 PLN)
- Monitor.
- Budowa pieca do wzrostu kryształów (2 szt.) (22 200 PLN)
- Komputer stacjonarny (3 200 PLN)
- Precyzyjna piła drutowa model WS-22 (30 300 PLN)
Information in the final report
- Publication in academic press/journals (1)
- Hall effect in hopping regimeAuthors:A. Avdonin, P. Skupiński, K. GraszaAcademic press:Physica B (rok: 2016, tom: 483, strony: 13–18), Wydawca: ElsevierStatus:PublishedDOI:10.1016/j.physb.2015.12.024 - link to the publication