Projects funded by the NCN

Information on the principal investigator and host institution

Information of the project and the call

Keywords

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Ultra-shallow plasma ion implantation for technology of advanced MOS/MOSFET structures fabricated on silicon and silicon carbide - characterization of phenomenon, attempts for technological optimization

2011/01/D/ST7/00640

Keywords:

silicon silicon carbide r.f. plasma fluorine/nitrogen implantation high-k dielectrics MOS/MOSFET devices

Descriptors:

  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Małgorzata Kalisz 

Number of co-investigators in the project: 18

Call: SONATA 1 - announced on 2011-03-15

Amount awarded: 822 400 PLN

Project start date (Y-m-d): 2011-12-07

Project end date (Y-m-d): 2017-06-06

Project duration:: 66 months (the same as in the proposal)

Project status: Project settled

Equipment purchased [PL]

  1. komputery osobiste (10 000 PLN)
  2. moduł do pomiarów impulsowych (Pulse Measuring Unit-4225) (74 000 PLN)

Information in the final report

  • Publication in academic press/journals (4)
  • Articles in post-conference publications (10)
  1. Wykorzystanie metody Taguchi'ego do optymlaizacji procesu ultra-płytkiej implantacji fluoru i azotu z plazmy w.cz.
    Authors:
    Małgorzata Kalisz, Robert Mroczyński
    Academic press:
    Elektronika (rok: 2013, tom: 10, strony: 18-21), Wydawca: Sigma-Not
    Status:
    Published
    DOI:
    brak - link to the publication
  2. Electrical characterization of MIS structures with HfOx gate dielectric films fabricated on silicon substrates modified by ultra-shallow ion implantation from RF plasma
    Authors:
    Robert Mroczyński, Małgorzata Kalisz, Magdalena Dominik
    Academic press:
    Physica Status Solidi (C) (rok: 2016, tom: 13, strony: 816-821), Wydawca: Wiley
    Status:
    Published
    DOI:
    0.1002/pssc.201600061 - link to the publication
  3. Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks
    Authors:
    Robert Mroczyński, Norbert Kwietniewski, Piotr Konarski
    Academic press:
    Microelectronic Engineering (rok: 2017, tom: 178, strony: 116-121), Wydawca: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mee.2017.05.017 - link to the publication
  4. Reactive magnetron sputtered hafnium oxide layers (HfOx) for non-volatile semiconductor memory (NVSM) devices
    Authors:
    R. Mroczyński, M. Szymańska, W. Głuszewski
    Academic press:
    Journal of Vacuum Science and Technology B (rok: 2015, tom: 33 (1), strony: 01A113-1 - 01A113-5), Wydawca: AVS
    Status:
    Published
    DOI:
    10.1116/1.4906090 - link to the publication
  1. Reactive magnetron sputtered hafnium oxide layers (HfOx) for non-volatile semiconductor memory (NVSM) devices
    Authors:
    Robert Mroczyński, Magdalena Szymańska, Wojciech Głuszewski
    Conference:
    18th Workshop on Dielectrics in Microelectronics - WoDiM 2014 (rok: 2014, ), Wydawca: -
    Data:
    konferencja 9-11 czerwca
    Status:
    Published
  2. Ultra-shallow Ion Implantation from RF plasma – the phenomenon and effect on electro-physical properties of MOS structures fabricated on Si and SiC substrates
    Authors:
    Robert Mroczyński
    Conference:
    World Congress of Nano Science and Technology 2016 (rok: 2016, ), Wydawca: BIT Group Global Ltd.
    Data:
    konferencja 26-28 X
    Status:
    Published
  3. Improvement of electro-physical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx stacks by means of ultra-shallow ion implantation from RF plasma
    Authors:
    R. Mroczyński, N. Kwietniewski, P. Konarski
    Conference:
    Insulating films on semiconductors - INFOS 2017 (rok: 2017, ), Wydawca: IHP Microelectronics
    Data:
    konferencja 27-30 czerwca
    Status:
    Published
  4. Technology of MIS/ISFET with SiO2/AlN system as a gate insulator
    Authors:
    Piotr Firek, Michał Waśkiewicz, Bartłomiej Stonio, Jan Szmidt
    Conference:
    37th International Conference of IMAPS-CPMT (rok: 2013, ), Wydawca: brak
    Data:
    konferencja 22-25 IX
    Status:
    Published
  5. Effect of ultra-shallow fluorine and nitrogen implantation from r.f. plasma on electrical properties of MIS structures with HfOx gate dielectric layers
    Authors:
    Małgorzata Kalisz, Magdalena Szymańska, Robert Mroczyński
    Conference:
    18th Workshop on Dielectrics in Microelectronics - WoDiM 2014 (rok: 2014, ), Wydawca: -
    Data:
    konferencja 9-11 czerwca
    Status:
    Published
  6. Ultra-shallow Ion Implantation from RF plasma and its effect on electro-physical properties of MOS structures with SiOx/HfOx double-gate dielctric layers fabricated on Si and 4H-SiC
    Authors:
    Robert Mroczyński, Małgorzata Kalisz, Jakub Jasiński, Norbert Kwietniewski, Magdalena Dominik, Romuald B. Beck, Jan Szmidt
    Conference:
    XII Konferencja Naukowa Technologia Elektronowa (ELTE) (rok: 2016, ), Wydawca: Katedra Elektroniki, Wydział Informatyki Elektroniki i Telekomunikacji Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
    Data:
    konferencja 11-14 IX
    Status:
    Published
  7. Effect of ultra-shallow fluorine and nitrogen implantation from r.f. plasma on electrical prameters of MIS structures with HfOx gate dielectric layers
    Authors:
    Małgorzata Kalisz, Magdalena Szymańska, Robert Mroczyński
    Conference:
    Semiconductor Surface Passivation 2013 (rok: 2013, ), Wydawca: brak
    Data:
    konferencja IX
    Status:
    Published
  8. Low-temperature technology of MIS structures with silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) layers for NVSM applications
    Authors:
    Robert Mroczyński
    Conference:
    World Congress of Smart Materials 2017 (rok: 2017, ), Wydawca: BIT Group Global Ltd. China
    Data:
    konferencja 16-18 marca
    Status:
    Published
  9. Thermal Stability od deposited by means of RF reactive magnetron sputtering hafnium oxide (HfOx) and hafnium oxynitride (HfOxNy) thin films
    Authors:
    Robert Mroczyński, Magdalena Dominik
    Conference:
    XII Konferencja Naukowa Technologia Elektronowa (ELTE) (rok: 2016, ), Wydawca: Katedra Elektroniki, Wydział Informatyki Elektroniki i Telekomunikacji Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
    Data:
    konferencja 11-14 IX
    Status:
    Published
  10. Electro-physical properties of gate-last MOSFETs with low-temperature SiOxNy/HfOx stack after ultra-shallow fluorine implantation from RF plasma
    Authors:
    Robert Mroczyński, Jakub Jasiński
    Conference:
    48th IEEE Semiconductor Interface Specialists Conference (SISC) (rok: 2017, ), Wydawca: n/d
    Data:
    konferencja 6-9 XII
    Status:
    Accepted for publication

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