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Ultra-shallow plasma ion implantation for technology of advanced MOS/MOSFET structures fabricated on silicon and silicon carbide - characterization of phenomenon, attempts for technological optimization

2011/01/D/ST7/00640

Keywords

Descriptors

  • ST7_5: Mikro- i nanoelektronika, optoelektronika

Panel

ST7 – Systems and communication engineering: electronics, communication, optoelectronics

Host institution

Politechnika Warszawska, Wydział Elektroniki i Technik Informacyjnych

Voivodeship: mazowieckie

Other projects carried out by the institution »

Principal investigator (from the host institution)

dr Małgorzata Jolanta Kalisz

Number of co-investigators in the project: 18

Call

SONATA 1 – announced on 2011-03-15

Amount awarded
822 400 PLN
Project start date
2011-12-07
Project end date
2017-06-06
Project duration
66 months (the same as in the proposal)
Project status
Project settled

Equipment purchased [PL]

  1. komputery osobiste. Cost: 10 000 PLN
  2. moduł do pomiarów impulsowych (Pulse Measuring Unit-4225). Cost: 74 000 PLN

Information in the final report

Publication in academic press/journals (4)

  1. Wykorzystanie metody Taguchi'ego do optymlaizacji procesu ultra-płytkiej implantacji fluoru i azotu z plazmy w.cz.

    Authors:
    Małgorzata Kalisz, Robert Mroczyński
    Academic press:
    Elektronika (year: 2013, volume: 10, pages: 18-21), Publisher: Sigma-Not
    Status:
    Published

  2. Reactive magnetron sputtered hafnium oxide layers (HfOx) for non-volatile semiconductor memory (NVSM) devices

    Authors:
    R. Mroczyński, M. Szymańska, W. Głuszewski
    Academic press:
    Journal of Vacuum Science and Technology B (year: 2015, volume: 33 (1), pages: 01A113-1 - 01A113-5), Publisher: AVS
    Status:
    Published
    DOI:
    10.1116/1.4906090 – link to the publication

  3. Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks

    Authors:
    Robert Mroczyński, Norbert Kwietniewski, Piotr Konarski
    Academic press:
    Microelectronic Engineering (year: 2017, volume: 178, pages: 116-121), Publisher: Elsevier
    Status:
    Published
    DOI:
    10.1016/j.mee.2017.05.017 – link to the publication

  4. Electrical characterization of MIS structures with HfOx gate dielectric films fabricated on silicon substrates modified by ultra-shallow ion implantation from RF plasma

    Authors:
    Robert Mroczyński, Małgorzata Kalisz, Magdalena Dominik
    Academic press:
    Physica Status Solidi (C) (year: 2016, volume: 13, pages: 816-821), Publisher: Wiley
    Status:
    Published

Articles in post-conference publications (10)

  1. Thermal Stability od deposited by means of RF reactive magnetron sputtering hafnium oxide (HfOx) and hafnium oxynitride (HfOxNy) thin films

    Authors:
    Robert Mroczyński, Magdalena Dominik
    Conference:
    XII Konferencja Naukowa Technologia Elektronowa (ELTE) (year: 2016, pages: 46024), Publisher: Katedra Elektroniki, Wydział Informatyki Elektroniki i Telekomunikacji Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
    Date:
    conference 11-14 IX
    Status:
    Published

  2. Improvement of electro-physical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx stacks by means of ultra-shallow ion implantation from RF plasma

    Authors:
    R. Mroczyński, N. Kwietniewski, P. Konarski
    Conference:
    Insulating films on semiconductors - INFOS 2017 (year: 2017, pages: 46024), Publisher: IHP Microelectronics
    Date:
    conference 27-30 czerwca
    Status:
    Published

  3. Ultra-shallow Ion Implantation from RF plasma and its effect on electro-physical properties of MOS structures with SiOx/HfOx double-gate dielctric layers fabricated on Si and 4H-SiC

    Authors:
    Robert Mroczyński, Małgorzata Kalisz, Jakub Jasiński, Norbert Kwietniewski, Magdalena Dominik, Romuald B. Beck, Jan Szmidt
    Conference:
    XII Konferencja Naukowa Technologia Elektronowa (ELTE) (year: 2016, pages: 46024), Publisher: Katedra Elektroniki, Wydział Informatyki Elektroniki i Telekomunikacji Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
    Date:
    conference 11-14 IX
    Status:
    Published

  4. Low-temperature technology of MIS structures with silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) layers for NVSM applications

    Authors:
    Robert Mroczyński
    Conference:
    World Congress of Smart Materials 2017 (year: 2017, pages: 119), Publisher: BIT Group Global Ltd. China
    Date:
    conference 16-18 marca
    Status:
    Published

  5. Effect of ultra-shallow fluorine and nitrogen implantation from r.f. plasma on electrical prameters of MIS structures with HfOx gate dielectric layers

    Authors:
    Małgorzata Kalisz, Magdalena Szymańska, Robert Mroczyński
    Conference:
    Semiconductor Surface Passivation 2013 (year: 2013, pages: 18), Publisher: brak
    Date:
    conference IX
    Status:
    Published

  6. Ultra-shallow Ion Implantation from RF plasma – the phenomenon and effect on electro-physical properties of MOS structures fabricated on Si and SiC substrates

    Authors:
    Robert Mroczyński
    Conference:
    World Congress of Nano Science and Technology 2016 (year: 2016, pages: -), Publisher: BIT Group Global Ltd.
    Date:
    conference 26-28 X
    Status:
    Published

  7. Reactive magnetron sputtered hafnium oxide layers (HfOx) for non-volatile semiconductor memory (NVSM) devices

    Authors:
    Robert Mroczyński, Magdalena Szymańska, Wojciech Głuszewski
    Conference:
    18th Workshop on Dielectrics in Microelectronics - WoDiM 2014 (year: 2014, pages: -), Publisher: -
    Date:
    conference 9-11 czerwca
    Status:
    Published

  8. Effect of ultra-shallow fluorine and nitrogen implantation from r.f. plasma on electrical properties of MIS structures with HfOx gate dielectric layers

    Authors:
    Małgorzata Kalisz, Magdalena Szymańska, Robert Mroczyński
    Conference:
    18th Workshop on Dielectrics in Microelectronics - WoDiM 2014 (year: 2014, pages: -), Publisher: -
    Date:
    conference 9-11 czerwca
    Status:
    Published

  9. Technology of MIS/ISFET with SiO2/AlN system as a gate insulator

    Authors:
    Piotr Firek, Michał Waśkiewicz, Bartłomiej Stonio, Jan Szmidt
    Conference:
    37th International Conference of IMAPS-CPMT (year: 2013, pages: brak), Publisher: brak
    Date:
    conference 22-25 IX
    Status:
    Published

  10. Electro-physical properties of gate-last MOSFETs with low-temperature SiOxNy/HfOx stack after ultra-shallow fluorine implantation from RF plasma

    Authors:
    Robert Mroczyński, Jakub Jasiński
    Conference:
    48th IEEE Semiconductor Interface Specialists Conference (SISC) (year: 2017, pages: 46024), Publisher: n/d
    Status:
    Accepted for publication

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Graphic design and implementation: Jakub Piotrowski