Research on MBE heteroepitaxy III-V epilayers on GaAs substrates
2015/17/B/ST5/01753
Keywords
Descriptors
- ST7_2: Elektrotechnika, elektronika: półprzewodniki, elementy i układy, systemy
- ST5_9: Materiały do konstrukcji sensorów
Panel
ST5 – Materials: materials synthesis, structure-properties relations, advanced and functional materials with designed properties, (macro)molecular architecture, material engineering
Host institution
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego, Wydział Nowych Technologii i Chemii
Voivodeship: mazowieckie
Principal investigator (from the host institution)
Number of co-investigators in the project: 6
Call
OPUS 9 – announced on 2015-03-16
- Amount awarded
- 1 606 800 PLN
- Project start date
- 2016-01-26
- Project end date
- 2019-09-25
- Project duration
- 44 months (the same as in the proposal)
- Project status
- Project settled
Project description
Download the project description in a pdf file
Note — project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.
Equipment purchased [PL]
- Ciało doskonale czarne. Cost: 22 800 PLN
- Spektrofotometr FT-IR. Cost: 210 000 PLN
Information in the final report
Publication in academic press/journals (16)
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High-operating temperature InAsSb/ AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy
- Authors:
- M. Kopytko, E, Gomółka, P. Martyniuk, P. Madejczyk, J. Rutkowski, A. Rogalski
- Academic press:
- Optical Engineering (year: 2018, volume: 57(12), pages: 127104-1-6), Publisher: SPIE
- Status:
- Published
-
Electronic band structure of InAs/InAsSb type-II superlattice for HOT LWIR detectors
- Authors:
- T. Manyk, K. Michalczewski, K. Murawski, K. Grodecki, J. Rutkowski, P. Martyniuk
- Academic press:
- Results in Physics (year: 2018, volume: 11, pages: 1119–1123), Publisher: Elsevier
- Status:
- Published
- DOI:
- 10.1016/j.rinp.2018.11.030 – link to the publication
-
Photon recycling effect in small pixel p-i-n HgCdTe long wavelength infrared photodiodes
- Authors:
- M. Kopytko, K. Jóźwikowski, P. Martyniuk, A. Rogalski
- Academic press:
- Infrared Physics & Technology (year: 2019, volume: 97, pages: 38-42), Publisher: Elsevier
- Status:
- Published
- DOI:
- 10.1016/j.infrared.2018.12.015 – link to the publication
-
Semiconductor contact layer characterization in a context of hall effect measurements
- Authors:
- A. Kowalewski, J. Wróbel, J. Boguski, K. Gorczyca, P. Martyniuk
- Academic press:
- Metrology and Measurement Systems (year: 2019, volume: 26(1), pages: 109-114), Publisher: Komitet Metrologii i Aparatury Naukowej PAN
- Status:
- Published
- DOI:
- 10.24425/mms.2019.126324 – link to the publication
-
Two-dimensional infrared and terahertz detectors: Outlook and status
- Authors:
- A. Rogalski, M. Koopytko, P. Martyniuk
- Academic press:
- Applied Physics Reviews (year: 2019, volume: 6, pages: 21316), Publisher: American Institute of Physics (AIP)
- Status:
- Published
- DOI:
- 10.1063/1.5088578 – link to the publication
-
Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements
- Authors:
- L. Ciura, A. Kolek, E. Gomółka, K. Murawski, M. Kopytko, P. Martyniuk and A. Rogalski
- Academic press:
- Semiconductor Science and Technology (year: 2019, volume: 34(10), pages: 105017), Publisher: IOP Science
- Status:
- Published
- DOI:
- 10.1088/1361-6641/ab3c02 – link to the publication
-
Numerical analysis of HgCdTe dual‑band infrared detector
- Authors:
- M. Kopytko, W. Gawron, A. Kębłowski, D. Stępień, P. Martyniuk, K. Jóźwikowski
- Academic press:
- Optical and Quantum Electronics (year: 2019, volume: 51, pages: 62-1-8), Publisher: Springer
- Status:
- Published
- DOI:
- 10.1007/s11082-019-1755-6 – link to the publication
-
Graphene-based materials in the infrared and terahertz detector families: a tutorial
- Authors:
- A. Rogalski
- Academic press:
- Advances in Optics and Photonics (year: 2019, volume: 11(2), pages: 314-379), Publisher: OSA Publishing
- Status:
- Published
- DOI:
- 10.1364/AOP.11.000314 – link to the publication
-
Type-II superlattice photodetectors versus HgCdTe photodiodes
- Authors:
- A. Rogalski, P. Martyniuk, M. Kopytko
- Academic press:
- Progress in Quantum Electronics (year: 2019, volume: 68 (100228), pages: 46041), Publisher: Elsevier
- Status:
- Published
- DOI:
- 10.1016/j.pquantelec.2019.100228 – link to the publication
-
Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates
- Authors:
- D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
- Academic press:
- Acta Physica Polonica A (year: 2017, volume: 132, pages: 322-324), Publisher: Polish Academy of Sciences Institute of Physics
- Status:
- Published
- DOI:
- 10.12693/APhysPolA.132.322 – link to the publication
-
Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique
- Authors:
- K. Michalczewski, F. Ivaldi, Ł. Kubiszyn, D. Benyahia, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
- Academic press:
- Acta Physica Polonica A (year: 2017, volume: 132, pages: 325-328), Publisher: Polish Academy of Sciences Institute of Physics
- Status:
- Published
- DOI:
- 10.12693/APhysPolA.132.325 – link to the publication
-
Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate
- Authors:
- D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
- Academic press:
- Journal of Crystal Growth (year: 2018, volume: 483, pages: 26-30), Publisher: Elsevier
- Status:
- Published
- DOI:
- 10.1016/j.jcrysgro.2017.11.015 – link to the publication
-
p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy
- Authors:
- D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
- Academic press:
- Journal of Semiconductor Technology and Science (year: 2016, volume: 16, pages: 695-701), Publisher: JSTS
- Status:
- Published
- DOI:
- 10.5573/JSTS.2016.16.5.695 – link to the publication
-
Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate
- Authors:
- D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
- Academic press:
- Optical and Quantum Electronics (year: 2016, volume: 48, pages: 428), Publisher: Springer
- Status:
- Published
- DOI:
- 10.1007/s11082-016-0698-4 – link to the publication
-
InAs/GaSb type-II superlattice infrared detectors: Future prospect
- Authors:
- A. Rogalski, P. Martyniuk, M. Kopytko
- Academic press:
- Applied Physics Reviews (year: 2017, volume: 4, pages: 31304), Publisher: American Institute of Physics (AIP)
- Status:
- Published
- DOI:
- 10.1063/1.4999077 – link to the publication
-
Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy
- Authors:
- D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
- Academic press:
- Journal of Electronic Materials (year: 2018, volume: 47, pages: 299-304), Publisher: Springer
- Status:
- Published
- DOI:
- 10.1007/s11664-017-5766-4 – link to the publication
Articles in post-conference publications (7)
-
Next decade in infrared detectors
- Authors:
- A. Rogalski
- Conference:
- Electro-Optical and Infrared Systems: Technology and Applications XIV (year: 2017, pages: 104330L-1-25), Publisher: SPIE
- Date:
- conference 11-14 wrzesień 2017
- Status:
- Published
-
InAs/GaSb type-II superlattices versus HgCdTe ternary alloys: future prospect
- Authors:
- A. Rogalski
- Conference:
- Electro-Optical and Infrared Systems: Technology and Applications XIV (year: 2017, pages: 104330U-1-19), Publisher: SPIE
- Date:
- conference 11-14 wrzesień 2017
- Status:
- Published
-
InAs/GaSb type-II superlattice infrared detectors: three decades of development
- Authors:
- A. Rogalski, M. Kopytko, P. Martyniuk
- Conference:
- Infrared Technology and Applications XLIII (year: 2017, pages: 1017715-1-13), Publisher: SPIE
- Date:
- conference 9-13 kwiecień 2017
- Status:
- Published
-
Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate
- Authors:
- J. Wróbel, K. Grodecki, D. Benyahia, K. Murawski, K. Michalczewski, J. Grzonka, J. Boguski, K. Gorczyca, G.A. Umana-Membreno, Ł. Kubiszyn, A. Kębłowski, P.P.Michałowski, E. Gomółka, P. Martyniuk, J. Piotrowski, A. Rogalski
- Conference:
- 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods (year: 2018, pages: 108300S-1-6), Publisher: SPIE
- Date:
- conference 26 luty - 3 marzec 2018
- Status:
- Published
-
InAsSb photoluminescence at low temperatures
- Authors:
- K. Murawski, K. Grodecki, P. Martyniuk
- Conference:
- 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods (year: 2018, pages: 108300T-1-4), Publisher: SPIE
- Date:
- conference 26 luty - 3 marzec 2018
- Status:
- Published
-
Long term stability study of InAsSb mid-wave infrared HOT detectors passivated through two step passivation technique
- Authors:
- K. Michalczewski, F. Ivaldi, Ł. Kubiszyn, D. Benyahia, J. Ciosek, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski, A. Rogalski
- Conference:
- 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods (year: 2018, pages: 108300Z-1-5), Publisher: SPIE
- Date:
- conference 26 luty - 3 marzec 2018
- Status:
- Published
-
Selected technological aspects of semiconductor samples preparation for Hall effect measurements
- Authors:
- K. Gorczyca, J. Boguski, J. Wróbel, P. Martyniuk
- Conference:
- 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods (year: 2018, pages: 108300V-1-5), Publisher: SPIE
- Date:
- conference 26 luty - 3 marzec 2018
- Status:
- Published
Book publications / chapters in book publications (1)
-
-
- Authors:
- A. Rogalski, M. Kopytko, P. Martyniuk
- Book:
- Antimonide-based infrared detectros: A new perspective (year: 2018, volume: -, pages: 1-273), Publisher: SPIE Press
- Status:
- Published