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Information on the principal investigator and host institution

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Investigations of growth technology of InGaAs/AlGaAs/GaAs quantum cascade lasers structures

2015/17/N/ST7/03936

Keywords:

quantum cascade lasers molecular beam epitaxy InGaAs/AlGaAs/GaAs

Descriptors:

  • ST7_5: Micro- and nanelectronic, optoelectronic and photonic components
  • ST3_5: Physical properties of semiconductors and insulators
  • ST5_4: Thin films

Panel:

ST7 - Systems and communication engineering: electronics, communication, optoelectronics

Host institution :

Instytut Technologii Elektronowej

woj. mazowieckie

Other projects carried out by the institution 

Principal investigator (from the host institution):

dr Piotr Gutowski 

Number of co-investigators in the project: 3

Call: PRELUDIUM 9 - announced on 2015-03-16

Amount awarded: 96 600 PLN

Project start date (Y-m-d): 2016-02-15

Project end date (Y-m-d): 2018-02-14

Project duration:: 24 months (the same as in the proposal)

Project status: Project settled

Project description

Download the project description in a pdf file

Note - project descriptions were prepared by the authors of the applications themselves and placed in the system in an unchanged form.

Information in the final report

  • Publication in academic press/journals (3)
  • Articles in post-conference publications (2)
  1. Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers
    Authors:
    PierścińskaD., Gutowski P., Hałdaś G., Kolek A., Sankowska I, Grzonka J., Mizera J., Pierściński K., Bugajski M.
    Academic press:
    Semiconductor Science and Technology (rok: 2018, tom: Vol. 33, No. 4, strony: 45305), Wydawca: IOP Publishing
    Status:
    Published
    DOI:
    10.1088/1361-6641/aaa91a - link to the publication
  2. On the Onset of Strain Realaxation in Al0.45Ga0.55As/InxGa1-xAs Acrive Region in QCL Structures
    Authors:
    Sankowska I., Gutowski P., Jasik A., Czuba K., Dąbrowski J., Bugajski M.
    Academic press:
    Journal of Applied Crystallography (rok: 2017, tom: 50, strony: 1376-1381), Wydawca: Wiley (International Union of Crystallography)
    Status:
    Published
    DOI:
    10.1107/S1600576717011815 - link to the publication
  3. Numerical simulation of GaAs-based mid-infrared one-phonon resonance quantum cascade laser
    Authors:
    Hałdaś G., Kolek A., Pierścińska D. , Gutowski P., Pierściński K., Karbownik P., Bugajski M.
    Academic press:
    Optical and Quantum Electronics (rok: 2017, tom: 2,05694444444444, strony: 45297), Wydawca: Springer
    Status:
    Published
    DOI:
    10.1007/s11082-016-0855-9 - link to the publication
  1. Analysis of Electronic Transport in a Single-Phonon Resonance mid-IR Quantum Cascade Laser
    Authors:
    Hałdaś G., Kolek A.,Pierścińska D., Gutowski P., Pierściński K., Karbownik P., Bugajski M.
    Conference:
    2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016) (rok: 2016, ), Wydawca: Institute of Electrical and Electronics Engineers (IEEE)
    Data:
    konferencja 11-15 Lipiec 2016
    Status:
    Published
  2. MBE Growth Process Investigation of Mid-Infrared Quantum Cascade Lasers
    Authors:
    P. Gutowski, I. Sankowska, K. Pierściński, D. Pierścińska, M. Bugajski
    Conference:
    The Twelfth International Conference on Advanced Semiconductor Devices and Microsystems (rok: 2018, ), Wydawca: Institute of Electrical and Electronics Engineers (IEEE)
    Data:
    konferencja 21-24.10.2018
    Status:
    Published

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